Polarization-Driven Topological Insulator Transition in aGaN/InN/GaNQuantum Well
about
Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy.Artificial Gauge Field and Topological Phase in a Conventional Two-dimensional Electron Gas with Antidot Lattices.Controlling the Electronic Structures and Properties of in-Plane Transition-Metal Dichalcogenides Quantum Wells.III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures.Two-dimensional gallium nitride realized via graphene encapsulation.Self-Assembled Si(111) Surface States: 2D Dirac Material for THz Plasmonics.Interface-induced topological insulator transition in GaAs/Ge/GaAs quantum wells.Topological insulator with negative spin-orbit coupling and transition between Weyl and Dirac semimetals in InGaN-based quantum wells
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Q33572323-4C64070D-128F-460F-870F-32B56B8407FDQ36168207-60FB44D8-2EA6-46FE-9D7D-9C38D9FAA22AQ36329420-59779D74-B1C9-4B06-8802-EF4EA668285AQ40490373-5D13D58E-F76E-47D4-94CF-10D26C972A6BQ48053733-5D39436D-F996-4392-B919-93D49D9FBBA4Q51835226-910BE2A5-9CD2-45A7-9CEC-32D394A3EA4DQ54695283-A21F7D8C-03CE-4355-840E-CAEAAAEB13B5Q58603785-50AF60F4-9260-4EF7-9149-65EB758D489C
P2860
Polarization-Driven Topological Insulator Transition in aGaN/InN/GaNQuantum Well
description
article publié dans la revue scientifique Physical Review Letters
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im November 2012 veröffentlichter wissenschaftlicher Artikel
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scientific article published in Physical Review Letters
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wetenschappelijk artikel
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наукова стаття, опублікована в листопаді 2012
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name
Polarization-Driven Topological Insulator Transition in aGaN/InN/GaNQuantum Well
@en
Polarization-Driven Topological Insulator Transition in aGaN/InN/GaNQuantum Well
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type
label
Polarization-Driven Topological Insulator Transition in aGaN/InN/GaNQuantum Well
@en
Polarization-Driven Topological Insulator Transition in aGaN/InN/GaNQuantum Well
@nl
prefLabel
Polarization-Driven Topological Insulator Transition in aGaN/InN/GaNQuantum Well
@en
Polarization-Driven Topological Insulator Transition in aGaN/InN/GaNQuantum Well
@nl
P2093
P2860
P1476
Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well
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P2093
P2860
P304
P356
10.1103/PHYSREVLETT.109.186803
P407
P577
2012-11-02T00:00:00Z