High dielectric constant gate oxides for metal oxide Si transistors
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Band offsets of ultrathin high- κ oxide films with SiLimits to doping in oxidesSoft x-ray reflectometry, hard x-ray photoelectron spectroscopy and transmission electron microscopy investigations of the internal structure of TiO2(Ti)/SiO2/Si stacksThickness dependent wetting properties and surface free energy of HfO2 thin filmsInfluence of interface structure on mass transport in phase boundaries between different ionic materials: Experimental studies and formal considerations.Rational design of inorganic dielectric materials with expected permittivity.Room-temperature fabrication of ultrathin oxide gate dielectrics for low-voltage operation of organic field-effect transistors.Energy-filtered cold electron transport at room temperatureDirect electron injection into an oxide insulator using a cathode buffer layerFatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric.Spin-cast and patterned organophosphonate self-assembled monolayer dielectrics on metal-oxide-activated SiElectrolytic synthesis of aqueous aluminum nanoclusters and in situ characterization by femtosecond Raman spectroscopy and computations.Recent progress on ZnO-based metal-semiconductor field-effect transistors and their application in transparent integrated circuits.Hybrid organic-inorganic light-emitting diodes.Use of thin sectioning (nanoskiving) to fabricate nanostructures for electronic and optical applications.Two-dimensional dielectric nanosheets: novel nanoelectronics from nanocrystal building blocks.Electric-double-layer field-effect transistors with ionic liquids.Unified interatomic potential and energy barrier distributions for amorphous oxides.The thickness-dependent band gap and defect features of ultrathin ZrO2 films studied by spectroscopic ellipsometry.Identification of dipole disorder in low temperature solution processed oxides: its utility and suppression for transparent high performance solution-processed hybrid electronics.Design and Fabrication of Interdigital Nanocapacitors Coated with HfO2.High-resolution anion photoelectron spectra of TiO2-, ZrO2-, and HfO2- obtained by slow electron velocity-map imaging.Characterizing the field of Atomic Layer Deposition: Authors, topics, and collaborations.Lateral trapping of DNA inside a voltage gated nanopore.Effects of graphene intercalation on dielectric reliability of HfO2 and modulation of effective work function for Ni/Gr/c-HfO2 interfaces: first-principles study.Evolution of Ni nanofilaments and electromagnetic coupling in the resistive switching of NiO.Control of Schottky barrier heights on high-K gate dielectrics for future complementary metal-oxide semiconductor devices.Prediction of semimetallic tetragonal Hf2O3 and Zr2O3 from first principles.Evolutionary search for new high-k dielectric materials: methodology and applications to hafnia-based oxides.Enhancing Interfacial Bonding between Anisotropically Oriented Grains Using a Glue-Nanofiller for Advanced Li-Ion Battery Cathode.Quantum-Spillover-Enhanced Surface-Plasmonic Absorption at the Interface of Silver and High-Index Dielectrics.Deposition of high-quality HfO2 on graphene and the effect of remote oxide phonon scattering.LaAlO3/Si capacitors: Comparison of different molecular beam deposition conditions and their impact on electrical propertiesA simple, room temperature, solid-state synthesis route for metal oxide nanostructuresGadolinium -niobates and -tantalates: Amorphous High-k Materials by Aqueous CSDAqueous Chemical Solution DepositionAqueous chemical solution deposition of ultrathin lanthanide oxide dielectric filmsLow temperature silicon dioxide by thermal atomic layer deposition: Investigation of material propertiesAnomalous scaling of spin accumulation in ferromagnetic tunnel devices with silicon and germanium
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P2860
High dielectric constant gate oxides for metal oxide Si transistors
description
article
@en
im Dezember 2005 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в грудні 2005
@uk
ലേഖനം
@ml
name
High dielectric constant gate oxides for metal oxide Si transistors
@en
High dielectric constant gate oxides for metal oxide Si transistors
@nl
type
label
High dielectric constant gate oxides for metal oxide Si transistors
@en
High dielectric constant gate oxides for metal oxide Si transistors
@nl
prefLabel
High dielectric constant gate oxides for metal oxide Si transistors
@en
High dielectric constant gate oxides for metal oxide Si transistors
@nl
P356
P1476
High dielectric constant gate oxides for metal oxide Si transistors
@en
P2093
John Robertson
P304
P356
10.1088/0034-4885/69/2/R02
P407
P577
2005-12-14T00:00:00Z