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Double-layer stepped Si(1 0 0) surfaces prepared in As-rich CVD ambienceAnalysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxyGaAsP/Si tandem solar cells: In situ study on GaP/Si:As virtual substrate preparationGaAsP/Si tandem solar cells: Realistic prediction of efficiency gain by applying strain-balanced multiple quantum wellsIn situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambientSuppression of Rotational Twin Formation in Virtual GaP/Si(111) Substrates for III–V Nanowire GrowthIn situ controlled heteroepitaxy of single-domain GaP on As-modified Si(100)Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si(111) for subsequent III-V nanowire growth
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description
researcher
@en
wetenschapper
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հետազոտող
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name
Agnieszka Paszuk
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Agnieszka Paszuk
@en
Agnieszka Paszuk
@es
Agnieszka Paszuk
@nl
type
label
Agnieszka Paszuk
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Agnieszka Paszuk
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Agnieszka Paszuk
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Agnieszka Paszuk
@nl
prefLabel
Agnieszka Paszuk
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Agnieszka Paszuk
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Agnieszka Paszuk
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Agnieszka Paszuk
@nl
P106
P214
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P31
P496
0000-0002-2173-4068
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