about
Exploration of new superconductors and functional materials, and fabrication of superconducting tapes and wires of iron pnictides.Quantum beat between two excitonic levels split by spin--orbit interactions in the oxychalcogenide LaCuOS.Solid-state source of atomic oxygen for low-temperature oxidation processes: application to pulsed laser deposition of TiO2:N films.Growth of c-axis-oriented superconducting KFe₂As₂ thin films.n-type conversion of SnS by isovalent ion substitution: Geometrical doping as a new doping route.Advantageous grain boundaries in iron pnictide superconductors.Thin film growth of Fe-based superconductors: from fundamental properties to functional devices. A comparative review.An Exceptionally Narrow Band-Gap (∼4 eV) Silicate Predicted in the Cubic Perovskite Structure: BaSiO3.Narrow bandgap in β-BaZn₂As₂ and its chemical origins.Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin filmsGrowth of high-quality SnS epitaxial films by H2S flow pulsed laser depositionSnAs with the NaCl-type Structure: Type-I Superconductivity and Single Valence State of SnDC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe2As2epitaxial filmsOrigins of Hole Doping and Relevant Optoelectronic Properties of Wide Gap p-Type Semiconductor, LaCuOSePseudoisotropic Upper Critical Field in Cobalt-DopedSrFe2As2Epitaxial FilmsNickel-Based Oxyphosphide Superconductor with a Layered Crystal Structure, LaNiOPExcitonic blue luminescence from p-LaCuOSe∕n-InGaZn5O8 light-emitting diode at room temperatureHeteroepitaxial growth of wide gap p-type semiconductors: LnCuOCh (Lr=La, Pr and Nd; Ch=S or Se) by reactive solid-phase epitaxySingle-atomic-layered quantum wells built in wide-gap semiconductorsLnCuOCh(Ln=lanthanide,Ch=chalcogen)Material Design of Green-Light-Emitting Semiconductors: Perovskite-Type Sulfide SrHfS3Tunable Light Emission through the Range 1.8-3.2 eV and p-Type Conductivity at Room Temperature for Nitride Semiconductors, Ca(Mg1-xZnx)2N2 (x = 0-1)
P50
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P50
description
onderzoeker
@nl
researcher
@en
հետազոտող
@hy
name
Hidenori Hiramatsu
@ast
Hidenori Hiramatsu
@en
Hidenori Hiramatsu
@es
Hidenori Hiramatsu
@nl
type
label
Hidenori Hiramatsu
@ast
Hidenori Hiramatsu
@en
Hidenori Hiramatsu
@es
Hidenori Hiramatsu
@nl
prefLabel
Hidenori Hiramatsu
@ast
Hidenori Hiramatsu
@en
Hidenori Hiramatsu
@es
Hidenori Hiramatsu
@nl
P106
P31
P496
0000-0002-5664-5831