about
Electronics based on two-dimensional materials.Complex effective index in graphene-silicon waveguides.Integrated Ring Oscillators based on high-performance Graphene Inverters.The integration of graphene into microelectronic devices.Experimental verification of electro-refractive phase modulation in grapheneGraphene based on-chip variable optical attenuator operating at 855 nm wavelength.Graphene integrated circuits: new prospects towards receiver realisation.Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems.Characterization of rat and human Kupffer cells after cryopreservation.Controlled Generation of a p-n Junction in a Waveguide Integrated Graphene Photodetector.Infrared transparent graphene heater for silicon photonic integrated circuits.High performance metal-insulator-graphene diodes for radio frequency power detection application.Graphene based low insertion loss electro-absorption modulator on SOI waveguide.Highly air stable passivation of graphene based field effect devicesA physics-based model of gate-tunable metal–graphene contact resistance benchmarked against experimental dataUltra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitrideEncapsulated graphene-based Hall sensors on foil with increased sensitivityNanosecond spin lifetimes in bottom-up fabricated bilayer graphene spin-valves with atomic layer deposited Al2O3 spin injection and detection barriersWeak Localization in Ferromagnetic (Ga,Mn)As NanostructuresDephasing in (Ga,Mn)As nanowires and ringsCurrent saturation and voltage gain in bilayer graphene field effect transistorsHigh on/off ratios in bilayer graphene field effect transistors realized by surface dopantsAll-electrical measurement of the density of states in (Ga,Mn)AsFlexible Hall sensors based on grapheneExperimental verification of carrier multiplication in grapheneGate-Defined Electron-Hole Double Dots in Bilayer GrapheneGate-tunable graphene-based Hall sensors on flexible substrates with increased sensitivityIntegrating graphene into semiconductor fabrication lines
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description
researcher
@en
ricercatore
@it
wetenschapper
@nl
հետազոտող
@hy
name
Daniel Neumaier
@ast
Daniel Neumaier
@en
Daniel Neumaier
@es
Daniel Neumaier
@nl
type
label
Daniel Neumaier
@ast
Daniel Neumaier
@en
Daniel Neumaier
@es
Daniel Neumaier
@nl
prefLabel
Daniel Neumaier
@ast
Daniel Neumaier
@en
Daniel Neumaier
@es
Daniel Neumaier
@nl
P214
P106
P21
P214
P31
P496
0000-0002-7394-9159
P734
P735
P7859
viaf-88161834