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Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin filmsPhase stabilization of Al:HfO2 grown on In(x)Ga(1-x)As substrates (x = 0, 0.15, 0.53) via trimethylaluminum-based atomic layer deposition.Metal organic chemical vapor deposition of phase change Ge1Sb2Te4 nanowires.Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD”Weak Antilocalization in Granular Sb2 Te3 Thin Films Deposited by MOCVDSingle-step Au-catalysed synthesis and microstructural characterization of core–shell Ge/In–Te nanowires by MOCVDAdvanced protective coatings for reflectivity enhancement by low temperature atomic layer deposition of HfO2 on Al surfaces for micromirror applicationsMOCVD growth and thermal analysis of Sb 2 Te 3 thin films and nanowiresSimulation of micro-mirrors for optical MEMSAtomic Layer Deposition of hexagonal ErFeO3 thin films on SiO2/SiEvolution of thermal conductivity of In3SbβTeγthin films up to 550 °CHardness, elastic modulus, and wear resistance of hafnium oxide-based films grown by atomic layer depositionLow power phase change memory switching of ultra-thin In3Sb1Te2 nanowiresMOCVD growth and structural characterization of In-Sb-Te nanowiresProtective coatings of hafnium dioxide by atomic layer deposition for microelectromechanical systems applicationsA Novel Sb2Te3 Polymorph Stable at the NanoscaleEffect of a thin Ti interfacial layer on the thermal resistance of Ge2Sb2Te5-TiN stackEffect on Al:MO2/In0.53Ga0.47As interface (M=Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer depositionSolid-state dewetting of ultra-thin Au films on SiO2and HfO2Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor depositionThermal properties of In–Sb–Te films and interfaces for phase change memory devicesA Viable Route to Enhance Permittivity of Gate Dielectrics on In0.53Ga0.47As(001): Trimethylaluminum-Based Atomic Layer Deposition of MeO2(Me = Zr, Hf)Atomic layer-deposited Al–HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memoryAu-catalyzed synthesis and characterisation of phase change Ge-doped Sb–Te nanowires by MOCVDEffect of nitrogen doping on the thermal conductivity of GeTe thin filmsGrowth study and characterization of In–Sb–Te compounds deposited onto different substrates by metal–organic chemical vapour depositionHigh Temperature Thermal Conductivity of Amorphous Al2O3Thin Films Grown by Low Temperature ALDSi surface passivation by Al2O3 thin films deposited using a low thermal budget atomic layer deposition processStructural and electrical analysis of In-Sb-Te-based PCM cellsThermal resistance at Al-Ge2Sb2Te5 interfaceAtomic Layer Deposition of Al-Doped ZrO2Thin Films as Gate Dielectric for In0.53Ga0.47AsAtomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applicationsElectronic properties of crystalline Ge1-xSbxTey thin filmsIdentification of the temperature-dependent thermal boundary resistance at a metal-phase change materialMechanisms for Substrate-Enhanced Growth during the Early Stages of Atomic Layer Deposition of Alumina onto Silicon Nitride SurfacesStructural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrodeTrimethylaluminum-based Atomic Layer Deposition of MO2 (M=Zr, Hf): Gate Dielectrics on In0.53Ga0.47As(001) SubstratesXPS composition study of stacked Si oxide/Si nitride/Si oxide nano-layersAtomic Layer Deposition of Al-Doped ZrOAu-catalyzed self assembly of GeTe nanowires by MOCVD
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description
hulumtuese
@sq
researcher
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wetenschapper
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հետազոտող
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name
Claudia Wiemer
@ast
Claudia Wiemer
@en
Claudia Wiemer
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Claudia Wiemer
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type
label
Claudia Wiemer
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Claudia Wiemer
@en
Claudia Wiemer
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Claudia Wiemer
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prefLabel
Claudia Wiemer
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Claudia Wiemer
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Claudia Wiemer
@es
Claudia Wiemer
@nl
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P1153
7003588473
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P31
P496
0000-0001-9975-0458