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Analog Memristive Synapse in Spiking Networks Implementing Unsupervised LearningFew electron limit of n-type metal oxide semiconductor single electron transistors.Silicene field-effect transistors operating at room temperature.Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells.Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin filmsTwo-dimensional Si nanosheets with local hexagonal structure on a MoS(2) surface.Phase stabilization of Al:HfO2 grown on In(x)Ga(1-x)As substrates (x = 0, 0.15, 0.53) via trimethylaluminum-based atomic layer deposition.Metal organic chemical vapor deposition of phase change Ge1Sb2Te4 nanowires.Nucleation and temperature-driven phase transitions of silicene superstructures on Ag(1 1 1).Colloidal Synthesis of Double Perovskite CsAgInCl and Mn-Doped CsAgInCl NanocrystalsAtomic Layer Deposition of Al-Doped ZrODetection of the Tetragonal and Monoclinic Phases and their Role on the Dielectric Constant of Atomic Layer Deposited La-Doped ZrOImproved Performance of In$_{0.53}$Ga$_{0.47}$As-Based Metal–Oxide–Semiconductor Capacitors with Al:ZrO$_{2}$ Gate Dielectric Grown by Atomic Layer DepositionSi nanocrystal synthesis in HfO2/SiO/HfO2multilayer structuresThermal and Electrical Characterization of Materials for Phase-Change Memory Cells†Cubic-to-monoclinic phase transition during the epitaxial growth of crystalline Gd2O3 films on Ge(001) substratesEpitaxial phase of hafnium dioxide for ultrascaled electronicsThe interface between Gd2O3 films and Ge(001): A comparative study between molecular and atomic oxygen mediated growthsNondestructive diagnostics of high-κ dielectrics for advanced electronic devicesTemperature dependence of transient and steady-state gate currents in HfO2 capacitorsAtomic-Scale Magnetic Properties of Truly 3d-Diluted ZnODefects in diamond thin filmsConduction-electron spin resonance in zinc-blende GaN thin filmsConversion Electron Mössbauer Spectroscopy Study of Epitaxial beta -FeSi2 Grown by Molecular Beam Epitaxy11B NMR and relaxation study of boron nitrideElectric-field gradient at the Fe nucleus in epsilon -FeSiDiffusion reaction of oxygen in HfO2/SiO2/Si stacksDevelopment of a parallel-plate avalanche counter to perform conversion electron Mössbauer spectroscopy at low temperaturesDielectric properties of high-kappa oxides: theory and experiment for Lu2O3Stability and interface quality of GeO2 films grown on Ge by atomic oxygen assisted depositionThe fabrication of tunable nanoporous oxide surfaces by block copolymer lithography and atomic layer depositionLocal electronic properties of corrugated silicene phasesPhosphorus doping of ultra-small silicon nanocrystalsConfinement effects and hyperfine structure in se doped silicon nanowiresEvidence of trigonal dangling bonds at the Ge(111)/oxide interface by electrically detected magnetic resonanceFe charge state adjustment in ZnO upon ion implantationElectronic properties of pristine and Se doped [001] silicon nanowires: an ab initio studyDonor wave functions delocalization in silicon nanowires: the peculiar [011] orientation
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P50
description
onderzoeker
@nl
researcher
@en
հետազոտող
@hy
name
Marco Fanciulli
@ast
Marco Fanciulli
@en
Marco Fanciulli
@es
Marco Fanciulli
@nl
type
label
Marco Fanciulli
@ast
Marco Fanciulli
@en
Marco Fanciulli
@es
Marco Fanciulli
@nl
prefLabel
Marco Fanciulli
@ast
Marco Fanciulli
@en
Marco Fanciulli
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Marco Fanciulli
@nl
P106
P21
P31
P496
0000-0003-2951-0859