Fundamental limits of exciton-exciton annihilation for light emission in transition metal dichalcogenide monolayers
about
Enabling valley selective exciton scattering in monolayer WSe2 through upconversionUltrafast non-radiative dynamics of atomically thin MoSe2.Deconvoluting the Photonic and Electronic Response of 2D Materials: The Case of MoS2.Coupled relaxation channels of excitons in monolayer MoSe2.Monolayer Tungsten Disulfide (WS2 ) via Chlorine-Driven Chemical Vapor Transport.
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Fundamental limits of exciton-exciton annihilation for light emission in transition metal dichalcogenide monolayers
description
im Mai 2016 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в травні 2016
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name
Fundamental limits of exciton- ...... etal dichalcogenide monolayers
@en
Fundamental limits of exciton- ...... etal dichalcogenide monolayers
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type
label
Fundamental limits of exciton- ...... etal dichalcogenide monolayers
@en
Fundamental limits of exciton- ...... etal dichalcogenide monolayers
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prefLabel
Fundamental limits of exciton- ...... etal dichalcogenide monolayers
@en
Fundamental limits of exciton- ...... etal dichalcogenide monolayers
@nl
P2093
P2860
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P1476
Fundamental limits of exciton- ...... etal dichalcogenide monolayers
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P2093
Andy Barrette
Kenan Gundogdu
Linyou Cao
P2860
P356
10.1103/PHYSREVB.93.201111
P407
P577
2016-05-24T00:00:00Z
P818
1512.00945