In(Ga)As self-assembled quantum ring formation by molecular beam epitaxy
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Oscillatory Persistent Currents in Self-Assembled Quantum RingsPulsed Laser-Driven Molecular Self-assembly of Cephalexin: Aggregation-Induced Fluorescence and Its Utility as a Mercury Ion Sensor.Self-organization of quantum dots in epitaxially strained solid films.Self-organized formation of GaSb/GaAs quantum rings.Circularly Polarized Emission from Ensembles of InGaAs/GaAs Quantum RingsOptical coupling of two distant InAs/GaAs quantum dots by a photonic-crystal microcavityExcitonic behavior in self-assembled InAs/GaAs quantum rings in high magnetic fieldsOscillator strength reduction induced by external electric fields in self-assembled quantum dots and ringsEffect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum ringsAtomic-scale structure of self-assembled In(Ga)As quantum rings in GaAsContinuum and discrete excitation spectrum of single quantum ringsExcited states of ring-shaped (InGa)As quantum dots in aGaAs∕(AlGa)Asquantum wellUltrahigh Density Arrays of Toroidal ZnO Nanostructures by One-Step Cooperative Self-Assembly Processes: Mechanism of Structural Evolution and Hybridization with Au Nanoparticles
P2860
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P2860
In(Ga)As self-assembled quantum ring formation by molecular beam epitaxy
description
im April 2003 veröffentlichter wissenschaftlicher Artikel
@de
наукова стаття, опублікована у квітні 2003
@uk
name
In(Ga)As self-assembled quantum ring formation by molecular beam epitaxy
@en
type
label
In(Ga)As self-assembled quantum ring formation by molecular beam epitaxy
@en
prefLabel
In(Ga)As self-assembled quantum ring formation by molecular beam epitaxy
@en
P356
P1476
In(Ga)As self-assembled quantum ring formation by molecular beam epitaxy
@en
P2093
Jorge M Garcı́a
P304
P356
10.1063/1.1566799
P407
P577
2003-04-14T00:00:00Z