High performance solution-processed amorphous zinc tin oxide thin film transistor

High performance solution-processed amorphous zinc tin oxide thin film transistor

Item
http://www.wikidata.org/entity/Q57617076
Directly writing resistor, inductor and capacitor to composite functional circuits: a super-simple way for alternative electronicsSolution processing of transparent conductors: from flask to film.Solution-processable metal oxide semiconductors for thin-film transistor applications.Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors.UV-visible spectroscopic analysis of electrical properties in alkali metal-doped amorphous zinc tin oxide thin-film transistors.Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.All solution-processed, hybrid light emitting field-effect transistors.Chemically Functionalized, Well-Dispersed Carbon Nanotubes in Lithium-Doped Zinc Oxide for Low-Cost, High-Performance Thin-Film Transistors.All-solution-processed transparent thin film transistor and its application to liquid crystals driving.Bias-Temperature-Illumination Stability of Aqueous Solution Processed Fluorine Doped Zinc Tin Oxide (ZTO:F) TransistorUltraviolet Photo-Annealing Process for Low Temperature Processed Sol-Gel Zinc Tin Oxide Thin Film TransistorsEffects of Sol-Gel Organic-Inorganic Hybrid Passivation on Stability of Solution-Processed Zinc Tin Oxide Thin Film TransistorsImproved negative bias illumination instability of sol-gel gallium zinc tin oxide thin film transistorsPost-Humid Annealing of Low-Temperature Solution-Processed Indium Based Metal Oxide TFTsPostannealing Process for Low Temperature Processed Sol–Gel Zinc Tin Oxide Thin Film TransistorsSolution-Processed, High Performance Aluminum Indium Oxide Thin-Film Transistors Fabricated at Low TemperatureEffect of annealing temperature on the electrical characteristics of Ti–Zn–Sn–O thin-film transistors fabricated via a solution process
P2860

High performance solution-processed amorphous zinc tin oxide thin film transistor

Item
http://www.wikidata.org/entity/Q57617076
description
article
@en
im Dezember 2008 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в грудні 2008
@uk
name
High performance solution-processed amorphous zinc tin oxide thin film transistor
@en
High performance solution-processed amorphous zinc tin oxide thin film transistor
@nl
type
label
High performance solution-processed amorphous zinc tin oxide thin film transistor
@en
High performance solution-processed amorphous zinc tin oxide thin film transistor
@nl
prefLabel
High performance solution-processed amorphous zinc tin oxide thin film transistor
@en
High performance solution-processed amorphous zinc tin oxide thin film transistor
@nl
P1433
P1476
P2093
P304
P31
P356
P433
P478
P577
P921
P356
P1433
P1476
High performance solution-processed amorphous zinc tin oxide thin film transistor
@en
P2093
P304
P31
P356
10.1088/0022-3727/42/3/035106
P433
P478
P577
P921