Vertical-Tunnel Field-Effect Transistor based on Silicon-MoS2 3D-2D Heterostructure
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Vertical-Tunnel Field-Effect Transistor based on Silicon-MoS2 3D-2D Heterostructure
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article
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im Oktober 2018 veröffentlichter wissenschaftlicher Artikel
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wetenschappelijk artikel
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наукова стаття, опублікована в жовтні 2018
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name
Vertical-Tunnel Field-Effect Transistor based on Silicon-MoS2 3D-2D Heterostructure
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Vertical-Tunnel Field-Effect Transistor based on Silicon-MoS2 3D-2D Heterostructure
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Vertical-Tunnel Field-Effect Transistor based on Silicon-MoS2 3D-2D Heterostructure
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Vertical-Tunnel Field-Effect Transistor based on Silicon-MoS2 3D-2D Heterostructure
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Vertical-Tunnel Field-Effect Transistor based on Silicon-MoS2 3D-2D Heterostructure
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Vertical-Tunnel Field-Effect Transistor based on Silicon-MoS2 3D-2D Heterostructure
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P2093
P356
P1476
Vertical-Tunnel Field-Effect T ...... wo-Dimensional Heterostructure
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P2093
Bondae Koo
Gwang Hyuk Shin
Hamin Park
Jae Eun Lee
Youngjun Woo
P304
40212-40218
P356
10.1021/ACSAMI.8B11396
P407
P577
2018-11-06T00:00:00Z