n- and p-Type modulation of ZnO nanomesh coated graphene field effect transistors
about
Graphene nanomesh photodetector with effective charge tunnelling from quantum dots.Electronic and optical properties of graphene and graphitic ZnO nanocomposite structures.Doping of RE ions in the 2D ZnO layered system to achieve low-dimensional upconverted persistent luminescence based on asymmetric doping in ZnO systems.Polymeric Carbon Nitride Nanosheets/Graphene Hybrid Phototransistors with High ResponsivityEffects of controllable biaxial strain on the Raman spectra of monolayer graphene prepared by chemical vapor deposition
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n- and p-Type modulation of ZnO nanomesh coated graphene field effect transistors
description
article
@en
im Januar 2012 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована у 2012
@uk
name
n- and p-Type modulation of ZnO nanomesh coated graphene field effect transistors
@en
n- and p-Type modulation of ZnO nanomesh coated graphene field effect transistors
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type
label
n- and p-Type modulation of ZnO nanomesh coated graphene field effect transistors
@en
n- and p-Type modulation of ZnO nanomesh coated graphene field effect transistors
@nl
prefLabel
n- and p-Type modulation of ZnO nanomesh coated graphene field effect transistors
@en
n- and p-Type modulation of ZnO nanomesh coated graphene field effect transistors
@nl
P2093
P2860
P50
P356
P1433
P1476
n- and p-Type modulation of ZnO nanomesh coated graphene field effect transistors
@en
P2093
Guo'an Tai
Yeung Yu Hui
P2860
P356
10.1039/C2NR30249G
P407
P577
2012-01-01T00:00:00Z