Recent developments in the study of continuous random networks

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Recent developments in the study of continuous random networks

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wetenschappelijk artikel

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наукова стаття, опублікована в січні 2002

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Recent developments in the study of continuous random networks

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Recent developments in the study of continuous random networks

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Recent developments in the study of continuous random networks

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Recent developments in the study of continuous random networks

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Recent developments in the study of continuous random networks

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Recent developments in the study of continuous random networks

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P1476

Recent developments in the study of continuous random networks

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P2093

G. T. Barkema

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S. M. Nakhmanson

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P2860

Realistic models of paracrystalline silicon

New empirical approach for the structure and energy of covalent systems.

Event-Based Relaxation of Continuous Disordered Systems

Computer simulation of local order in condensed phases of silicon

Fluctuation microscopy: a probe of atomic correlations in disordered materials

Amorphous silicon studied by ab initio molecular dynamics: Preparation, structure, and properties.

Structural, dynamical, and electronic properties of amorphous silicon: An ab initio molecular dynamics study.

Interatomic potential for silicon defects and disordered phases

Environment-dependent interatomic potential for bulk silicon

Fitting the Stillinger–Weber potential to amorphous silicon

P304

171-183

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P31

scholarly article

P356

10.1080/13642810208208540

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P433

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P478

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P50

Normand Mousseau

P577

2002-01-01T00:00:00Z

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