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Activated mechanisms in amorphous silicon: An activation-relaxation-technique study

Activated mechanisms in amorphous silicon: An activation-relaxation-technique study

http://www.wikidata.org/entity/Q57835753

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A systematic enumeration of local topological relaxation mechanisms in amorphous networks and their efficiency in network relaxation.Atomistic simulations of rare events using gentlest ascent dynamics.Some improvements of the activation-relaxation technique method for finding transition pathways on potential energy surfaces.Impact of fragility on enthalpy relaxation in glass.Stability and plasticity of silicon nanowires: The role of wire perimeter Structure and dielectric properties of amorphous high-κoxides: HfO2, ZrO2, and their alloys Amorphous silicon under mechanical shear deformations: Shear velocity and temperature effects Energy landscape of small clusters of self-interstitial dumbbells in iron Energy landscape of relaxed amorphous silicon Exploring the energy landscape of proteins: A characterization of the activation-relaxation technique High-quality continuous random networks Optimal activation and diffusion paths of perfect events in amorphous silicon

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Q48672332-9C717B6D-C212-4D46-AEBA-4171C93B3EA0 Q51392067-3712A673-4C80-457A-8F8F-B003840EF063 Q51847693-06E9E931-8D4B-4D45-87D6-79345A19D721 Q53765506-926F17A4-E5F6-4F23-AC4D-DEE522748EEB Q56689133-AF8E9BE8-CDCE-4E91-8455-D3CD4B29B681 Q57525950-E72AFC4D-DD01-42E1-ADC8-70737C10672C Q57835641-1BF27CBE-BF07-4FF9-B338-BD688282206B Q57835646-14E0A2FE-1D6F-4CA6-AA46-E186F49FA626 Q57835723-4C07F3B6-88BB-4721-AB7B-093BFFA466E5 Q57835734-5F9986F6-4F9A-46B8-BC8E-8FDBD58FA035 Q57835760-52AF0252-FAF2-4926-AAC3-82424E3A4D83 Q57835763-2D7F2A7E-0CC2-4224-B345-9929646D780A

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Activated mechanisms in amorphous silicon: An activation-relaxation-technique study

http://www.wikidata.org/entity/Q57835753

description

im Januar 2000 veröffentlichter wissenschaftlicher Artikel

@de

wetenschappelijk artikel

@nl

наукова стаття, опублікована в січні 2000

@uk

name

Activated mechanisms in amorphous silicon: An activation-relaxation-technique study

@en

Activated mechanisms in amorphous silicon: An activation-relaxation-technique study

@nl

type

label

Activated mechanisms in amorphous silicon: An activation-relaxation-technique study

@en

Activated mechanisms in amorphous silicon: An activation-relaxation-technique study

@nl

prefLabel

Activated mechanisms in amorphous silicon: An activation-relaxation-technique study

@en

Activated mechanisms in amorphous silicon: An activation-relaxation-technique study

@nl

P1433

Q57835753-D6C51D52-F910-4E60-B961-6043C635A600

P1476

Q57835753-B06A0DC5-9403-4E3A-B959-F41837924DCD

P2093

Q57835753-E38D5B2D-A153-4E93-8646-C33FFDD7BF0C

P2860

Q57835753-105BCC44-28E5-447E-B35A-2146D7552214

Q57835753-743910A9-DFAA-402E-8282-2DA657B5C71A

Q57835753-9211FD2D-A3CE-4D18-9484-9E49859B6271

Q57835753-95501027-03EA-4299-AA9A-8B8640E21892

Q57835753-96B59F31-6C71-47B8-BCB9-665B212FB39E

Q57835753-9BBE6EEB-AC54-40AA-98E3-6677CE1608AE

Q57835753-A8AB9C77-3B3C-45C1-A3B0-082701D93A2A

Q57835753-A8E7AE6D-800C-4FE2-A0C8-89F369D15A82

Q57835753-C066107B-DE64-4B57-A526-3AEBF16BD2C8

Q57835753-C48BACB2-7F25-487C-A4DD-1C64C0B98AB2

P304

Q57835753-A1B3B219-2888-4116-8D0B-73E560D645FF

P31

Q57835753-68534011-1249-4BFF-8551-C1E0291C7068

P356

Q57835753-DE3C988F-A69B-4C44-8E8D-8890D34BE415

P407

Q57835753-7E6954CD-D9AC-466D-BF9B-26FD995C71D3

P433

Q57835753-A5CFD592-511E-47F2-81A0-960CB2007DC5

P478

Q57835753-D38807E3-D9DA-4B2C-8E82-00145D1F0661

P50

Q57835753-584BAC6C-3F33-4AFE-8B82-E8968D4B4F55

P577

Q57835753-BBE68DA0-8AE7-4FC1-A60B-89E9CE3A05D2

P818

Q57835753-37C0DFD1-2919-4F08-B386-245120CBB63C

P356

PHYSREVB.61.1898

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Physical Review B

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Activated mechanisms in amorphous silicon: An activation-relaxation-technique study

@en

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G. T. Barkema

http://www.w3.org/2001/XMLSchema#string

P2860

Event-Based Relaxation of Continuous Disordered Systems

Structural relaxation and defect annihilation in pure amorphous silicon.

Interatomic potential for silicon defects and disordered phases

Density of amorphous Si

Exploring high-dimensional energy landscapes

Identification of Relaxation and Diffusion Mechanisms in Amorphous Silicon

Tight-binding molecular-dynamics studies of defects and disorder in covalently bonded materials

Traveling through potential energy landscapes of disordered materials: The activation-relaxation technique

Structural, electronic, and dynamical properties of amorphous gallium arsenide: A comparison between two topological models

Topology of Amorphous Tetrahedral Semiconductors on Intermediate Length Scales

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1898-1906

http://www.w3.org/2001/XMLSchema#string

P31

scholarly article

P356

10.1103/PHYSREVB.61.1898

http://www.w3.org/2001/XMLSchema#string

P407

P433

3

http://www.w3.org/2001/XMLSchema#string

P478

61

http://www.w3.org/2001/XMLSchema#string

P50

Normand Mousseau

P577

2000-01-15T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

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cond-mat/9905410

http://www.w3.org/2001/XMLSchema#string