High-pressure Raman study of the Ba-doped silicon clathrateBa24Si100up to27GPa
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Raman and x-ray diffraction studies of cationic type-I clathrate I8Sb8Ge38: Pressure-induced phase transitions and amorphizationHigh-pressure Raman study of Ba doped type-III germanium clathrate Ba24Ge100 up to 26 GPaRaman and x-ray diffraction studies of Ba doped germanium clathrate Ba8Ge43 at high pressures
P2860
High-pressure Raman study of the Ba-doped silicon clathrateBa24Si100up to27GPa
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im März 2005 veröffentlichter wissenschaftlicher Artikel
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wetenschappelijk artikel
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наукова стаття, опублікована в березні 2005
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name
High-pressure Raman study of the Ba-doped silicon clathrateBa24Si100up to27GPa
@en
High-pressure Raman study of the Ba-doped silicon clathrateBa24Si100up to27GPa
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type
label
High-pressure Raman study of the Ba-doped silicon clathrateBa24Si100up to27GPa
@en
High-pressure Raman study of the Ba-doped silicon clathrateBa24Si100up to27GPa
@nl
prefLabel
High-pressure Raman study of the Ba-doped silicon clathrateBa24Si100up to27GPa
@en
High-pressure Raman study of the Ba-doped silicon clathrateBa24Si100up to27GPa
@nl
P2093
P2860
P1433
P1476
High-pressure Raman study of the Ba-doped silicon clathrateBa24Si100up to27GPa
@en
P2093
Hiroshi Fukuoka
Hiroyasu Shimizu
Shigeo Sasaki
Shoji Yamanaka
Tetsuji Kume
Toyoki Kuroda
P2860
P356
10.1103/PHYSREVB.71.094108
P407
P577
2005-03-30T00:00:00Z