Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates
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Macroscopic and high-throughput printing of aligned nanostructured polymer semiconductors for MHz large-area electronics.Versatile organic transistors by solution processing.Self-Assembled Monolayers as Patterning Tool for Organic Electronic Devices.A Toolbox for Controlling the Energetics and Localization of Electronic States in Self-Assembled Organic Monolayers.Solution-processable, low-voltage, and high-performance monolayer field-effect transistors with aqueous stability and high sensitivity.2D Organic Materials for Optoelectronic Applications.Integrated circuits based on conjugated polymer monolayer.Molecular dynamics simulations of phosphonic acid-aluminum oxide self-organization and their evolution into ordered monolayers.Self-assembled monolayer field-effect transistors based on oligo-9,9'-dioctylfluorene phosphonic acids.Green processing of metal oxide core-shell nanoparticles as low-temperature dielectrics in organic thin-film transistors.Synthesis of organosilicon derivatives of [1]benzothieno[3,2-b][1]-benzothiophene for efficient monolayer Langmuir-Blodgett organic field effect transistors.Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing.Improving the Performance of Organic Thin-Film Transistors by Ion Doping of Ethylene-Glycol-Based Self-Assembled Monolayer Hybrid Dielectrics.Enhanced Performance of Self-Assembled Monolayer Field-Effect Transistors with Top-Contact Geometry through Molecular Tailoring, Heated Assembly, and Thermal AnnealingInterface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory TransistorsTuning the molecular order of C60-based self-assembled monolayers in field-effect transistorsThe Relationship between Structural and Electrical Characteristics in Perylenecarboxydiimide-Based NanoarchitecturesCharge density increase in submonolayer organic field-effect transistors
P2860
Q30400843-AB079463-B7F6-4FEE-96CC-2AF1E8326BAEQ38372187-F8CE052F-2F68-454B-BD46-7BE3C3C2E17BQ39119241-504F0494-C138-4C05-AE0E-2F7B94EA4A22Q41988637-C7538783-50D8-424B-A6E4-03619F44AF68Q46773322-862B6C26-26B0-4933-B52E-9FA7A6EB7928Q47576071-A92EAB50-17D7-4074-AD3A-1693B2076985Q47693784-1A730CD1-1366-4169-B8DE-ED0F3FBDECB9Q48294774-209B976F-9514-442F-86B3-D1F6778D8AE7Q49823324-6999E868-677E-4515-8E84-D0EE234D158CQ50247693-EB46E8F4-7C90-4C6F-9A04-8E9DDAA85461Q50996092-9B7DCA4A-D0A7-4DE9-8F8F-A0369E9F8317Q51098345-513F5FA5-D155-4B67-9678-C7B4CDCA3074Q51662820-2549386C-2E32-43F0-AF0B-4591A534A5FAQ57952206-811C4B31-1EB9-4CA3-A1DC-ECC918964051Q58231864-F0C8D3EA-7A84-45D2-A258-7C83ED15F9FCQ58231880-51A69313-D984-431B-8D30-9C8C35A48B83Q58232998-53DEABFA-9A11-43C7-B6D1-A8015143E12CQ58237186-A17C6F78-F471-45C7-8AE4-3E0C5B9F5AF9
P2860
Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates
description
article
@en
im Juni 2013 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в червні 2013
@uk
name
Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates
@en
Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates
@nl
type
label
Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates
@en
Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates
@nl
prefLabel
Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates
@en
Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates
@nl
P2093
P2860
P50
P356
P1433
P1476
Low-voltage self-assembled monolayer field-effect transistors on flexible substrates
@en
P2093
Andreas Magerl
Artoem Khassanov
Atefeh Y Amin
Juan José Segura
Kislon Voitchovsky
Thomas Schmaltz
Timo Meyer-Friedrichsen
P2860
P304
P356
10.1002/ADMA.201301176
P407
P577
2013-06-21T00:00:00Z