Electronic properties of TiO2-based materials characterized by high Ti3+ self-doping and low recombination rate of electron–hole pairs
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Electronic properties of TiO2-based materials characterized by high Ti3+ self-doping and low recombination rate of electron–hole pairs
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im Jahr 2017 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована у 2017
@uk
name
Electronic properties of TiO2- ...... on rate of electron–hole pairs
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Electronic properties of TiO2- ...... on rate of electron–hole pairs
@nl
type
label
Electronic properties of TiO2- ...... on rate of electron–hole pairs
@en
Electronic properties of TiO2- ...... on rate of electron–hole pairs
@nl
prefLabel
Electronic properties of TiO2- ...... on rate of electron–hole pairs
@en
Electronic properties of TiO2- ...... on rate of electron–hole pairs
@nl
P2093
P2860
P356
P1433
P1476
Electronic properties of TiO2- ...... on rate of electron–hole pairs
@en
P2093
C. Imparato
D. Pirozzi
F. Sannino
G. D'Errico
L. De Stefano
M. Fantauzzi
P. Pernice
P2860
P304
P356
10.1039/C6RA27111A
P577
2017-01-01T00:00:00Z