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Dramatic influence of curvature of nanowire on chiral domain wall velocity.Magnetic moment of inertia within the torque-torque correlation model.Positive temperature coefficient of magnetic anisotropy in polyvinylidene fluoride (PVDF)-based magnetic composites.In-plane Isotropic Microwave Performance of CoZr Trilayer in GHz Range.Reversed ageing of Fe3O4 nanoparticles by hydrogen plasma.Intrinsic optimization using stochastic nanomagnets.Recent progress in multiferroic magnetoelectric composites: from bulk to thin films.An overview of the magnetoresistance phenomenon in molecular systems.The first decade of organic spintronics research.Interface-Induced Phenomena in Magnetism.Domain-wall velocities of up to 750 m s(-1) driven by exchange-coupling torque in synthetic antiferromagnets.Cryogenic current-in-plane tunneling apparatus.Design and Synthesis of an Artificial Perpendicular Hard Ferrimagnet with High Thermal and Magnetic Field Stabilities.Tuning magnetic properties for domain wall pinning via localized metal diffusion.Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application.Tuning the coercivity and exchange bias by controlling the interface coupling in bimagnetic core/shell nanoparticles.Enhancing TMR and spin-filtration by using out-of-plane graphene insulating barrier in MTJs.Compensated Ferrimagnetic Tetragonal Heusler Thin Films for Antiferromagnetic Spintronics.Tunnel spin polarization versus energy for clean and doped Al2O3 barriers.Robust antiferromagnetic coupling in hard-soft bi-magnetic core/shell nanoparticles.Exchange-bias phenomenon: the role of the ferromagnetic spin structure.Opposite spin asymmetry of elastic and inelastic scattering of nonequilibrium holes injected into a ferromagnet.Temperature-dependent asymmetry of the nonlocal spin-injection resistance: evidence for spin nonconserving interface scattering.Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100).Review on Physically Flexible Nonvolatile Memory for Internet of Everything ElectronicsTransport spin polarization of the rare-earth transition-metal alloy Co1−xGdxPerturbation of spin-valve nanowire reference layers during domain wall motion induced by nanosecond-long current pulsesChemical-order-induced magnetic exchange bias in epitaxialFePt3filmsAngle-DependentNi2+X-Ray Magnetic Linear Dichroism: Interfacial Coupling RevisitedRole of the electronic structure on the relationship between the crystallinity of CoFe and its tunneling magnetoresistanceBias Voltage Dependence of Tunneling Anisotropic Magnetoresistance in Magnetic Tunnel Junctions with MgO andAl2O3Tunnel Barriers1∕f noise in magnetic tunnel junctions with MgO tunnel barriersHigh negative tunneling magnetoresistance in magnetic tunnel junctions with a ferrimagnetic CoFe–Gd electrode and a CoFe interface layerSpin-Polarized Current in Spin Valves and Magnetic Tunnel JunctionsTunneling spin polarization measurements from ferromagnet/MgO tunnel junctions using NbN superconductorFinite Tunneling Spin Polarization at the Compensation Point of Rare-Earth-Metal–Transition-Metal AlloysRole of Tunneling Matrix Elements in Determining the Magnitude of the Tunneling Spin Polarization of3dTransition Metal Ferromagnetic AlloysStructural characterization of base/collector interfaces for magnetic tunnel transistors grown on Si(001)The influence of nonmagnetic seed layers on the magnetotransport properties of magnetic tunnel transistors with a silicon collectorManipulation by exchange coupling in layered magnetic structures
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description
im Mai 2003 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в травні 2003
@uk
name
Magnetically engineered spintronic sensors and memory
@en
Magnetically engineered spintronic sensors and memory
@nl
type
label
Magnetically engineered spintronic sensors and memory
@en
Magnetically engineered spintronic sensors and memory
@nl
prefLabel
Magnetically engineered spintronic sensors and memory
@en
Magnetically engineered spintronic sensors and memory
@nl
P2093
P1476
Magnetically engineered spintronic sensors and memory
@en
P2093
P304
P356
10.1109/JPROC.2003.811807
P577
2003-05-01T00:00:00Z