Light polarization control in strain-engineered GaAsN/GaAsN:H heterostructures
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Nanoscale Tailoring of the Polarization Properties of Dilute-Nitride Semiconductors via H-Assisted Strain EngineeringFabrication of Site-Controlled Quantum Dots by Spatially Selective Incorporation of Hydrogen in Ga(AsN)/GaAs HeterostructuresQuantum confinement effects in hydrogen-intercalatedGa1−xAsxNx-GaAs1−xNx:Hplanar heterostructures investigated by photoluminescence spectroscopy
P2860
Light polarization control in strain-engineered GaAsN/GaAsN:H heterostructures
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im Juni 2009 veröffentlichter wissenschaftlicher Artikel
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wetenschappelijk artikel
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наукова стаття, опублікована в червні 2009
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name
Light polarization control in strain-engineered GaAsN/GaAsN:H heterostructures
@en
Light polarization control in strain-engineered GaAsN/GaAsN:H heterostructures
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type
label
Light polarization control in strain-engineered GaAsN/GaAsN:H heterostructures
@en
Light polarization control in strain-engineered GaAsN/GaAsN:H heterostructures
@nl
prefLabel
Light polarization control in strain-engineered GaAsN/GaAsN:H heterostructures
@en
Light polarization control in strain-engineered GaAsN/GaAsN:H heterostructures
@nl
P2093
P50
P356
P1476
Light polarization control in strain-engineered GaAsN/GaAsN:H heterostructures
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P2093
A. Polimeni
F. Martelli
M. Capizzi
P2860
P304
P356
10.1063/1.3157838
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P577
2009-06-29T00:00:00Z