Stability of Sb-Te layered structures: First-principles study

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Effect of Bi bilayers on the topological states ofBi2Se3: A first-principles study Homologous series of layered structures in binary and ternary Bi-Sb-Te-Se systems:Ab initiostudy van der Waals bonding and the quasiparticle band structure of SnO from first principles

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Q58833893-76777B14-6E48-4BA4-BBD4-283320202EB2 Q58833895-7132B1E9-AA9E-42A1-B1B7-95EAC82DAC52 Q58833905-36AB09FC-583F-448E-AD14-DAFB95FCB4A0

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Stability of Sb-Te layered structures: First-principles study

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im April 2012 veröffentlichter wissenschaftlicher Artikel

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wetenschappelijk artikel

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наукова стаття, опублікована у квітні 2012

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Stability of Sb-Te layered structures: First-principles study

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Stability of Sb-Te layered structures: First-principles study

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Stability of Sb-Te layered structures: First-principles study

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Stability of Sb-Te layered structures: First-principles study

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Stability of Sb-Te layered structures: First-principles study

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Stability of Sb-Te layered structures: First-principles study

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Stability of Sb-Te layered structures: First-principles study

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B. Partoens

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D. Lamoen

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K. Govaerts

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M. H. F. Sluiter

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P2860

Cluster expansion method for adsorption: Application to hydrogen chemisorption on graphene

Generalized Gradient Approximation Made Simple

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set

Special points for Brillouin-zone integrations

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set

Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi 2 Te 3 and Sb 2 Te 3

Phase-change materials for rewriteable data storage.

Thin-film thermoelectric devices with high room-temperature figures of merit.

Low-cost and nanoscale non-volatile memory concept for future silicon chips.

Extremely long period-stacking structure in the Sb-Te binary system.

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scholarly article

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10.1103/PHYSREVB.85.144114

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English

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2012-04-23T00:00:00Z

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Stability of Sb-Te layered structures: First-principles study

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P2860

P2860

Stability of Sb-Te layered structures: First-principles study

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P1433

P1476

P2093

P2860

P31

P356

P407

P433

P478

P577

P356

P1433

P1476

P2093

P2860

P31

P356

P407

P433

P478

P577