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Limits to doping in oxidesEmergent phenomena at oxide interfacesA heterojunction modulation-doped Mott transistorIn-plane tunnelling field-effect transistor integrated on Silicon.Data encoding based on the shape of the ferroelectric domains produced by using a scanning probe microscope tip.Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.Multilevel data storage memory using deterministic polarization control.Electric field manipulation of magnetic and transport properties in SrRuO3/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructure.Interface-induced nonswitchable domains in ferroelectric thin films.A high-mobility electronic system at an electrolyte-gated oxide surface.Interface effects and the evolution of ferromagnetism in La2/3Sr1/3MnO3 ultrathin filmsPhoto-induced enhancement of the power factor of Cu2S thermoelectric films.Positive-bias gate-controlled metal-insulator transition in ultrathin VO2 channels with TiO2 gate dielectricsThe memory effect of magnetoelectric coupling in FeGaB/NiTi/PMN-PT multiferroic heterostructureNon-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe3O4/PMN-PT (011).Oxygen Displacement in Cuprates under Ionic Liquid Field-Effect Gating.In operando evidence of deoxygenation in ionic liquid gating of YBa2Cu3O7-X.Thermal stability of 2DEG at amorphous LaAlO3/crystalline SrTiO3 heterointerfacesNanostructure studies of strongly correlated materials.Oxide nanowires for spintronics: materials and devices.Magnetoelectric interfaces and spin transport.Electric-double-layer field-effect transistors with ionic liquids.Endeavor of Iontronics: From Fundamentals to Applications of Ion-Controlled Electronics.Enhancement of Sodium Ion Battery Performance Enabled by Oxygen Vacancies.Monolayer-directed assembly and magnetic properties of FePt nanoparticles on patterned aluminum oxide.Strain Effect on Electronic Structure and Work Function in α-Fe₂O₃ Films.Dopant size effects on novel functionalities: High-temperature interfacial superconductivity.Electrolyte-gated SmCoO3 thin-film transistors exhibiting thickness-dependent large switching ratio at room temperature.Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide.Polarization screening-induced magnetic phase gradients at complex oxide interfaces.Enhanced electronic-transport modulation in single-crystalline VO2 nanowire-based solid-state field-effect transistors.Metal-Halide Perovskite Transistors for Printed Electronics: Challenges and Opportunities.Interface-induced multiferroism by design in complex oxide superlattices.The screened pseudo-charge repulsive potential in perturbed orbitals for band calculations by DFT+U.Electric field tunable half-metallic characteristic at Fe3O4/BaTiO3 interfaces.Ferroelectric tunnel junctions for information storage and processing.Percolation via Combined Electrostatic and Chemical Doping in Complex Oxide Films.Nonvolatile gate effect in a ferroelectric-semiconductor quantum well.Electronically coupled complementary interfaces between perovskite band insulators.Nanoscale ferroelectric field-effect writing and reading using scanning tunnelling spectroscopy.
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P2860
description
article publié dans la revue scientifique Nature
@fr
scientific article published in Nature
@en
wetenschappelijk artikel
@nl
наукова стаття, опублікована в Nature в серпні 2003
@uk
name
Electric field effect in correlated oxide systems
@en
Electric field effect in correlated oxide systems
@nl
type
label
Electric field effect in correlated oxide systems
@en
Electric field effect in correlated oxide systems
@nl
prefLabel
Electric field effect in correlated oxide systems
@en
Electric field effect in correlated oxide systems
@nl
P2860
P356
P1433
P1476
Electric field effect in correlated oxide systems
@en
P2093
P2860
P2888
P304
P356
10.1038/NATURE01878
P407
P577
2003-08-01T00:00:00Z
P6179
1015022806