about
A transparent electrochromic metal-insulator switching device with three-terminal transistor geometryUltraviolet Lasers Realized via Electrostatic Doping MethodGiant reversible, facet-dependent, structural changes in a correlated-electron insulator induced by ionic liquid gating.Outlook and emerging semiconducting materials for ambipolar transistors.Onset of two-dimensional superconductivity in space charge doped few-layer molybdenum disulfide.Ferroelectricity driven magnetism at domain walls in LaAlO3/PbTiO3 superlatticesEngineered Mott ground state in a LaTiO(3+δ)/LaNiO3 heterostructure.Anomalous enhancement of the sheet carrier density beyond the classic limit on a SrTiO3 surface.Oxygen Displacement in Cuprates under Ionic Liquid Field-Effect Gating.Gate control of electronic phases in a quarter-filled manganite.Anomalously large anisotropic magnetoresistance in a perovskite manganite.In operando evidence of deoxygenation in ionic liquid gating of YBa2Cu3O7-X.Tuning the entanglement between orbital reconstruction and charge transfer at a film surface.Nanostructure studies of strongly correlated materials.Oxide nanowires for spintronics: materials and devices.Control of functional responses via reversible oxygen loss in La₁-xSrxFeO₃-δ films.Endeavor of Iontronics: From Fundamentals to Applications of Ion-Controlled Electronics.Gate-tunable diode and photovoltaic effect in an organic-2D layered material p-n junction.Interface-Induced Phenomena in Magnetism.Dual field effects in electrolyte-gated spinel ferrite: electrostatic carrier doping and redox reactions.Schmitt trigger using a self-healing ionic liquid gated transistor.Tuning the metal-insulator crossover and magnetism in SrRuO₃ by ionic gating.Ferroelectric control of a Mott insulator.Polarization screening-induced magnetic phase gradients at complex oxide interfaces.Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors.Most effective way to improve the hydrogen storage abilities of Na-decorated BN sheets: applying external biaxial strain and an electric field.Random walk to graphene (Nobel lecture).Electrolyte-gated transistors for organic and printed electronics.The first example of a mixed valence ternary compound of silver with random distribution of Ag(I) and Ag(II) cations.Collective bulk carrier delocalization driven by electrostatic surface charge accumulation.Percolation via Combined Electrostatic and Chemical Doping in Complex Oxide Films.First-principles molecular dynamics at a constant electrode potential.Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO(2).Electric Field Control of Interfacial Ferromagnetism in CaMnO_{3}/CaRuO_{3} Heterostructures.Dominant mobility modulation by the electric field effect at the LaAlO3/SrTiO3 interface.High conductance 2D transport around the Hall mobility peak in electrolyte-gated rubrene crystals.Novel Metal-Insulator Transition at the SmTiO_{3}/SrTiO_{3} Interface.Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe_{2}.Correlated Electron Materials and Field Effect Transistors for Logic: A ReviewCharacteristic energies, transition temperatures, and switching effects in clean S|N|S graphene nanostructures
P2860
Q27316040-47BB65FB-166F-4426-9EE7-E1FF7B2D32D3Q34491712-70F523C8-3C7B-468F-9777-BD098BA22C6CQ35037928-9421A30E-ACBA-4370-B3DA-E8DEEAE82B49Q35109845-FA3C5DA7-E1A2-4A35-BE1A-5314A9B2505BQ35829469-0162670C-278F-43C5-BF59-556400DA21B4Q36273495-9215F716-C3E4-4244-81F4-1F172AF2596BQ36528932-E1DA24D2-5FD8-4F88-9520-A21381806B07Q36897986-3653D5D7-0501-4272-88FE-024AAD8EEAE0Q37220344-99173657-2924-49F9-8A01-62BFE61F1C70Q37221680-0E834924-2F31-44FB-8084-95879C35E913Q37300502-1915A537-BAAE-4418-B654-BF84C342A722Q37590003-7D2E2398-49C8-43A7-AF3C-A9A5B7B145BEQ37604017-07DDA829-83C5-4BED-8B08-F4A26DF31606Q37914732-FD7A684A-15BC-464A-8629-A68D270EC9C3Q37980371-2E309B59-DAC6-41F6-8015-BEDC50BD910BQ38439312-466E94D3-ED66-49ED-8342-178FBB7A51A9Q38674657-82340709-01FF-4813-BD2E-8CD0EAF64928Q38967808-1ACF41B9-BED0-41D6-A90E-BECF6B70AFA6Q41633849-F1692E9E-88FE-4205-ADAB-1D9186FA1AE8Q41899908-FCE322A2-5C7F-4E81-908E-43BC7D0C3193Q42073849-3F360715-5904-48EB-AA1E-9D8E4396D269Q42941315-B3E20ACA-4574-4874-BC1C-E693837CDF36Q42959359-E175FFD4-D856-4297-889C-F0888FE485B8Q46311439-65AB7F32-2B93-467A-969E-F188F078DB1DQ48006607-D5959E72-08DB-4C29-8E36-AA7B2E8A7E40Q48048127-D00E6934-22EC-4901-9EA5-7D13BA326B08Q48538223-48785E28-B5C3-420C-9B8C-863F51CF8048Q48543448-6B1F3F0C-4C85-4508-8394-80E320065085Q50216036-A15CFD4C-4F9E-4C50-811A-B4C758165D53Q50945282-BF5CA5ED-908F-4164-9D26-EC1260A16411Q50947096-EBA2C3B8-8CF7-4EB2-9A92-BD3296CF6E38Q51268134-BF39BED3-B814-49DF-BD40-F4E3B102902DQ51636664-CB44CA7C-3733-4F1D-BB9A-FFA2C9FC003EQ51817825-8BCC1424-7DE9-4E2F-8239-8AA2DB9543D8Q53066381-8FF6EE5B-C030-4363-9CB9-53B373009DFFQ53353132-702D71AC-975F-4CED-890D-CBE3AD20F208Q53735330-4B83AFC0-9DD0-455B-B7AF-20D29BF92D42Q53929598-04A4695B-BE15-49C8-928C-5AEEBF7DFCD1Q56803837-67B87732-1EC7-4EFC-8612-B56348CD8978Q57676175-3834757D-88A7-44A8-9691-7D908132B2FA
P2860
description
im November 2006 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в листопаді 2006
@uk
name
Electrostatic modification of novel materials
@en
Electrostatic modification of novel materials
@nl
type
label
Electrostatic modification of novel materials
@en
Electrostatic modification of novel materials
@nl
prefLabel
Electrostatic modification of novel materials
@en
Electrostatic modification of novel materials
@nl
P2093
P2860
P50
P1476
Electrostatic modification of novel materials
@en
P2093
Alberto F. Morpurgo
C. Daniel Frisbie
Douglas Natelson
J. N. Eckstein
Jean-Marc Triscone
M. Di Ventra
M. E. Gershenson
P2860
P304
P356
10.1103/REVMODPHYS.78.1185
P577
2006-11-10T00:00:00Z