about
Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure.Tuning the work function of monolayer graphene on 4H-SiC (0001) with nitric acid.A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering.RETRACTED: Large local lattice expansion in graphene adlayers grown on copper.Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructuresIntegration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applicationsUltrafast electron dynamics in twisted graphene by femtosecond photoemission electron microscopyProbing the electronic properties of CVD graphene superlatticesRetraction Note: Large local lattice expansion in graphene adlayers grown on copper
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description
researcher ORCID ID = 0000-0002-8460-448X
@en
name
Mohamed Boutchich
@ast
Mohamed Boutchich
@en
Mohamed Boutchich
@es
Mohamed Boutchich
@nl
type
label
Mohamed Boutchich
@ast
Mohamed Boutchich
@en
Mohamed Boutchich
@es
Mohamed Boutchich
@nl
prefLabel
Mohamed Boutchich
@ast
Mohamed Boutchich
@en
Mohamed Boutchich
@es
Mohamed Boutchich
@nl
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24485478600
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0000-0002-8460-448X