about
Robust and stretchable indium gallium zinc oxide-based electronic textiles formed by cilia-assisted transfer printing.Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure.Epitaxial synthesis of molybdenum carbide and formation of a Mo2C/MoS2 hybrid structure via chemical conversion of molybdenum disulfide.Chemically induced Fermi level pinning effects of high-k dielectrics on graphene.ZnO composite nanolayer with mobility edge quantization for multi-value logic transistorsLow-Power Complementary Logic Circuit Using Polymer-Electrolyte-Gated Graphene Switching DevicesScalable Two-Dimensional Lateral Metal/Semiconductor Junction Fabricated with Selective Synthetic Integration of Transition-Metal-Carbide (Mo2C)/-Dichalcogenide (MoS2)Plasmonic Transition Metal Carbide Electrodes for High-Performance InSe Photodetectors
P50
Q27318077-6D38857A-74AA-4345-A014-0D6A6CB8B0A9Q36360748-5B4E7596-964B-4A24-B9AA-DF51AABA89CFQ47202627-11E36FA6-1102-423F-BAC4-CE2AC1A41A0DQ53454499-9BA02E13-6DE2-4D1D-945F-39300DD7E614Q64079902-D77CBBC5-67C7-45FB-AA44-E11FA40793DFQ91349930-BD2E37E0-101E-4D12-8EBE-371297F31440Q91432576-984271B7-A92A-49DF-B7D6-E72848B4BD96Q91922538-62510D18-6CA3-4C95-9972-0EF606B5CB52
P50
description
researcher ORCID ID = 0000-0002-4540-7731
@en
wetenschapper
@nl
name
Byoung Hun Lee
@ast
Byoung Hun Lee
@en
Byoung Hun Lee
@es
Byoung Hun Lee
@nl
type
label
Byoung Hun Lee
@ast
Byoung Hun Lee
@en
Byoung Hun Lee
@es
Byoung Hun Lee
@nl
prefLabel
Byoung Hun Lee
@ast
Byoung Hun Lee
@en
Byoung Hun Lee
@es
Byoung Hun Lee
@nl
P1153
P1153
26642954300
55450478100
56330290600
56706607300
56808077100
57194898286
P31
P496
0000-0002-4540-7731