about
Submonolayer Uniformity of Type II InAs/GaInSb W-shaped Quantum Wells Probed by Full-Wafer Photoluminescence Mapping in the Mid-infrared Spectral Range.Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade LasersPassivation of lanthanide surface sites in sub-10 nm NaYF(4):Eu(3+) nanocrystals.Time-resolved photoluminescence studies of annealed 1.3-μm GaInNAsSb quantum wells.On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals.On the origin of emission and thermal quenching of SRSO:Er3+ films grown by ECR-PECVD.Correlation between matrix structural order and compressive stress exerted on silicon nanocrystals embedded in silicon-rich silicon oxide.The effect of core and lanthanide ion dopants in sodium fluoride-based nanocrystals on phagocytic activity of human blood leukocytes.Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well.NaYF4 nanocrystals with TOPO ligands: synthesis-dependent structural and luminescent properties.Triggered high-purity telecom-wavelength single-photon generation from p-shell-driven InGaAs/GaAs quantum dot.Facile synthesis of phosphine free ultra-small PbSe nanocrystals and their light harvesting studies in ETA solar cells.Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO2 multilayer films.Green light emission from terbium doped silicon rich silicon oxide films obtained by plasma enhanced chemical vapor deposition.Controlled synthesis of tuned bandgap nanodimensional alloys of PbS(x)Se(1-x).Carrier dynamics in type-II GaAsSb/GaAs quantum wells.Hydrophobic sodium fluoride-based nanocrystals doped with lanthanide ions: assessment of in vitro toxicity to human blood lymphocytes and phagocytes.Ghost Branch Photoluminescence From a Polariton Fluid Under Nonresonant Excitation.Spectroscopic studies of samarium doped CdF2 crystalPolarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional ContrastEnhanced photoluminescence stability of CdS nanocrystals through a zinc acetate reagentβ-NaGdF4:Eu3+ nanocrystal markers for melanoma tumor imagingCytotoxicity and imaging studies of β-NaGdF4:Yb3+Er3+@PEG-Mo nanorodsSize-Dependent Indirect Excitation of Trivalent Er Ions via Si Nanocrystals Embedded in a Silicon-Rich Silicon Oxide Matrix Deposited by ECR-PECVDCarrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 μmControl of Dynamic Properties of InAs/InAlGaAs/InP Hybrid Quantum Well-Quantum Dot Structures Designed as Active Parts of 1.55 μm Emitting LasersConfinement regime in self-assembled InAs/InAlGaAs/InP quantum dashes determined from exciton and biexciton recombination kineticsLateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well systemCarrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emissionExciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55μmSingle-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 KRoom Temperature Carrier Kinetics in the W-type GaInAsSb/InAs/AlSb Quantum Well Structure Emitting in Mid-Infrared Spectral RangeSingle photon emission up to liquid nitrogen temperature from charged excitons confined in GaAs-based epitaxial nanostructuresMagnetic field control of the neutral and charged exciton fine structure in single quantum dashes emitting at 1.55 μmInfluence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral regionSingle photon emission at 1.55 μm from charged and neutral exciton confined in a single quantum dashCarrier Dynamics and Dynamic Band-Bending in Type-II ZnTe/ZnSe Quantum DotsCarrier relaxation dynamics in InAs/GaInAsP/InP(001) quantum dashes emitting near 1.55 μmExciton and biexciton dynamics in single self-assembled InAs/InGaAlAs/InP quantum dash emitting near 1.55 μmImpact of wetting-layer density of states on the carrier relaxation process in low indium content self-assembled (In,Ga)As/GaAs quantum dots
P50
Q35809399-230F02A2-25B6-42E8-A9F9-F7183CEFA22EQ35862911-185F36A0-1508-45EC-8A75-DF539A58A434Q36408330-68F9A378-2FB2-475A-8364-EE67850C59C3Q37616645-079C613A-9A33-4B7C-ACDD-CC55E3B6ED46Q38990094-C63F6367-000C-41B6-BAD3-503EF213B5F0Q41103092-00130E74-5996-437C-9BDB-D11EF917D89FQ41840215-F865AEBB-F1D8-4C85-8B5F-0E9E7E41585FQ42321858-2D9B1E31-F394-4B74-ADC8-55C168754898Q43548431-EE78608E-6B51-4949-BC3B-D5A25C7E9E00Q45793141-EBC8EBEB-5E1A-4879-91C9-84FB4980BD64Q48528756-CE6BB5B6-F256-434A-B4E4-E71A23E58DAAQ50221861-3D0885C5-68FE-4B82-B14E-18BC6FCB4060Q50449612-1467D8E4-2A0B-4D4C-9E9C-07DC610C0370Q50488520-B59CF2FF-98EF-4D88-8353-A8CA4BB3BCD2Q50542163-B92B59F0-3B22-49F5-BD41-C8401A6396E3Q51387024-1D9A7FE5-65C7-4D23-8FAF-A5A30F0CCE00Q51700501-C065C859-6491-402A-BF99-F9EB90E85383Q53285159-D7A2AE83-7E1C-40E1-99E0-46AA9A8BAE95Q53826533-96F175A9-95D4-41A5-B9F0-F603F469922CQ56937713-9C307A3D-D54F-4AA4-A09F-E72C855BDB5DQ57352488-8A83CF55-FA9B-452D-ADE5-B4E42DC8C1EAQ57377174-2D948FB5-55A7-430F-828F-9B274A9F76A1Q57377219-4E246173-00FB-4EC6-9AA4-8741C27A7F07Q58648358-59D95AC1-D890-4ED2-AE2A-0E655F2CDA56Q59244241-B79F4B06-FA40-4A1C-92F8-4FE925FE6C3AQ59244242-C5E7E7D3-AFAE-46AF-870E-EF5E390D643DQ59244244-70F30D77-D7E6-44FA-B880-12941D5933E1Q59244245-8A8DE1EF-86A1-4D32-86EB-3D64D924A7ECQ59244246-43AD29E2-84F6-4288-8FE5-C2AA09BE4D26Q59244247-E2E81FE7-5385-4B2B-B039-839D43CE3C0BQ59244249-5DF1EB57-D1B2-436D-9C31-6B9B42FF5E98Q59244250-1052E0EA-4F71-4684-8943-1CC7AB74B334Q59244253-F325AD44-6245-440E-9C20-C839272C50FEQ59244254-EEF00D72-6CCE-4113-BE69-E2DA5C67DB0FQ59244255-27CA7FA0-1B5D-48D2-87ED-AA9BBA89F95CQ59244257-F71C9634-EA5E-49B9-B87F-8F04C67D5B40Q59244258-1F107B1A-BF5A-4BAB-8412-2C75382E2074Q59244260-5B6C0047-CF6C-4E8E-A44B-41072E1BE58AQ59244261-B5B1CF79-D1AA-4B5B-B09F-0E21598474B1Q59244262-C7F598D8-095F-43AA-8895-D342D33CE54C
P50
description
condensed matter physicist at Wrocław University of Technology
@en
natuurkundige
@nl
name
Jan Misiewicz
@ast
Jan Misiewicz
@en
Jan Misiewicz
@es
Jan Misiewicz
@nl
type
label
Jan Misiewicz
@ast
Jan Misiewicz
@en
Jan Misiewicz
@es
Jan Misiewicz
@nl
prefLabel
Jan Misiewicz
@ast
Jan Misiewicz
@en
Jan Misiewicz
@es
Jan Misiewicz
@nl
P214
P106
P213
0000 0001 1413 2846
P214
P31
P7859
lccn-n90632873