Imaging Localized Energy States in Silicon-Doped InGaN Nanowires Using 4D Electron Microscopy
about
Imaging Localized Energy States in Silicon-Doped InGaN Nanowires Using 4D Electron Microscopy
description
wetenschappelijk artikel
@nl
наукова стаття, опублікована в січні 2018
@uk
name
Imaging Localized Energy State ...... s Using 4D Electron Microscopy
@en
Imaging Localized Energy State ...... s Using 4D Electron Microscopy
@nl
type
label
Imaging Localized Energy State ...... s Using 4D Electron Microscopy
@en
Imaging Localized Energy State ...... s Using 4D Electron Microscopy
@nl
prefLabel
Imaging Localized Energy State ...... s Using 4D Electron Microscopy
@en
Imaging Localized Energy State ...... s Using 4D Electron Microscopy
@nl
P2093
P50
P1433
P1476
Imaging Localized Energy State ...... s Using 4D Electron Microscopy
@en
P2093
Alain Goriely
Boon S. Ooi
Haoze Yang
Md Azimul Haque
Nimer Wehbe
Victor M. Burlakov
P304
P356
10.1021/ACSENERGYLETT.7B01330
P50
P577
2018-01-30T00:00:00Z