about
Multiferroic materials based on organic transition-metal molecular nanowires.Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface.Bias Voltage Dependence of Tunneling Anisotropic Magnetoresistance in Magnetic Tunnel Junctions with MgO andAl2O3Tunnel BarriersSuppression of Octahedral Tilts and Associated Changes in Electronic Properties at Epitaxial Oxide Heterostructure InterfacesMagnetic moment softening and domain wall resistance in Ni nanowiresHighly spin-polarized conducting state at the interface between nonmagnetic band insulators: LaAlO3/FeS2 (001)Magnetic tunnel junctions with ferroelectric barriers: prediction of four resistance States from first principlesEnhancement of ferroelectric polarization stability by interface engineeringFerroelectric control of the magnetocrystalline anisotropy of the Fe/BaTiO(3)(001) interfaceGiant tunneling electroresistance effect driven by an electrically controlled spin valve at a complex oxide interfaceFerroelectric instability under screened Coulomb interactions
P50
Q44977929-8952F1D6-1D01-4AF8-83B6-697B3770494CQ46736019-B321FC51-FD64-4196-AE00-2D1627AD8A73Q58374837-3550137B-36C0-4AB7-AE82-4A3D7949CC8FQ61923368-EA788B3D-5BE8-4B22-BEB9-861E370615CCQ79204526-FD2EE988-A9EB-4B61-B1DD-AFB2FEF21EFDQ82630511-55DE94E0-5628-42B8-9321-5944C129EB3EQ83120762-9BF220CB-68C5-4DD0-8FFD-B9FD2ECC1124Q83328059-F58CD62C-399D-4685-8B3D-4D78B79194E2Q84057845-86CB4FF3-184D-4A0E-A7B1-279F7C817B8DQ84094113-A577760B-C74A-4B56-9B43-B6E8B35835DEQ86026444-E5AD2EDD-7B4B-4CCF-9B05-D9F35D625EF1
P50
description
researcher
@en
wetenschapper
@nl
հետազոտող
@hy
name
J. D. Burton
@ast
J. D. Burton
@en
J. D. Burton
@es
J. D. Burton
@nl
type
label
J. D. Burton
@ast
J. D. Burton
@en
J. D. Burton
@es
J. D. Burton
@nl
prefLabel
J. D. Burton
@ast
J. D. Burton
@en
J. D. Burton
@es
J. D. Burton
@nl
P106
P1153
26421091900
P31
P496
0000-0001-5535-2407