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Photo-acoustic spectroscopy revealing resonant absorption of self-assembled GaAs-based nanowires.The influence of temperature on the photoluminescence properties of single InAs quantum dots grown on patterned GaAs.Sub-Poissonian Narrowing of Length Distributions Realized in Ga-Catalyzed GaAs Nanowires.Effect of Partial Crystallization on the Structural and Luminescence Properties of Er3+-Doped Phosphate Glasses.Field Emission from Self-Catalyzed GaAs Nanowires.The Role of Groove Periodicity in the Formation of Site-Controlled Quantum Dot Chains.Structural Investigation of Uniform Ensembles of Self-Catalyzed GaAs Nanowires Fabricated by a Lithography-Free Technique.Size-dependent properties of single InAs quantum dots grown in nanoimprint lithography patterned GaAs pits.Evidence of Optical Circular Dichroism in GaAs-Based Nanowires Partially Covered with GoldPhoto-acoustic Spectroscopy of Resonant Absorption in III-V Semiconductor NanowiresSite-controlled InAs quantum dot chains coupled to surface plasmonsOptical Energy Transfer and Loss Mechanisms in Coupled Intracavity Light EmittersLithography-free oxide patterns as templates for self-catalyzed growth of highly uniform GaAs nanowires on Si(111)Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxyThe influence of post-growth annealing on the optical properties of InAs quantum dot chains grown on pre-patterned GaAs(100)Strain compensated 1120nm GaInAs/GaAs vertical external-cavity surface-emitting laser grown by molecular beam epitaxyStructural characterization of InAs quantum dot chains grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs(100)Efficient GaInNAs Gain Mirrors for Semiconductor Disk Lasers at 1.18 μm and 1.22 μmMetamorphic growth of tensile strained GaInP on GaAs substrateDemonstration of extrinsic chirality of photoluminescence with semiconductor-metal hybrid nanowiresChiral near-field manipulation in Au-GaAs hybrid hexagonal nanowiresDeterministic Switching of the Growth Direction of Self-Catalyzed GaAs Nanowires
P50
Q30354740-40F8A5A5-D00D-498B-9AAA-C40F9EF34ECAQ36341161-ED80B218-C697-4233-B6E8-002962E4485DQ38637338-D297057D-4D21-42F3-A056-64009E3EE791Q38643630-ED3FBC5B-4D9C-4E5B-9CAA-CE4CA0075E65Q41666904-1138105D-7076-45AB-B617-B5F6ABB4FF4FQ41836797-DE9FD1C6-BCAB-4CBE-8051-F02C30F68E52Q42315705-2578A85D-A4CE-4CF0-9B77-DCAFBB57398BQ47235197-AFA6E98D-9A40-4927-9F0D-23518285B954Q60238198-0D2AEAA6-5045-4F62-BE77-E80E8CD29FBDQ60238239-548A23DE-C3F3-4D7A-ADD0-A4DACB14DB1DQ60238283-B0DE6175-87BC-47DD-886C-555DBE00AF01Q60238299-E0BA2F44-005F-4E30-BFE1-7382912BB6F4Q60238318-1FDE0BAF-D353-47B2-A4E1-E8A75A9BEC69Q60238558-CCE305D7-9948-4CD3-8106-9E71422FF3AEQ60238594-F7E0F4C2-0140-4757-ABEA-CDCD332C6444Q60238648-501F7C9A-0805-4EFA-A966-92C67299D024Q60238650-6DEAC97C-2A23-450B-9DCC-BCC8D42B39A0Q60238692-CF21D989-4293-4580-AD3F-9D675DB9C713Q60238744-8F0C9F41-644E-4A53-AA15-046862E63F5AQ64056961-628DD714-06BC-42F4-9853-3529AB8E97A7Q88722024-FD0170A7-1F45-4143-A878-C2AABE30BC2FQ90409274-F7CB9671-D9B5-4351-A795-F18EE1BF7427
P50
description
onderzoeker
@nl
researcher
@en
հետազոտող
@hy
name
Teemu V Hakkarainen
@ast
Teemu V Hakkarainen
@en
Teemu V Hakkarainen
@es
Teemu V Hakkarainen
@nl
type
label
Teemu V Hakkarainen
@ast
Teemu V Hakkarainen
@en
Teemu V Hakkarainen
@es
Teemu V Hakkarainen
@nl
prefLabel
Teemu V Hakkarainen
@ast
Teemu V Hakkarainen
@en
Teemu V Hakkarainen
@es
Teemu V Hakkarainen
@nl
P106
P31
P496
0000-0001-6758-2496