about
Electron tunneling characteristics of a cubic quantum dot, (PbS)32.Electronic conduction in a model three-terminal molecular transistor.Spin-dependent electron transport in C and Ge doped BN monolayers.Electrochemical reduction of CO2 on graphene supported transition metals - towards single atom catalysts.On-device lead sequestration for perovskite solar cellsHierarchical Nanoassembly of MoS2/Co9S8/Ni3S2/Ni as a Highly Efficient Electrocatalyst for Overall Water Splitting in a Wide pH RangeSilicene-supported TiO2 nanostructures: a theoretical study of electronic and optical properties
P50
Q35081508-A211FB1F-4433-4F97-875E-490278A8BB08Q43234836-9F4E499F-CDD8-4E92-A531-4233941BF7F1Q50112427-764F6909-5729-4CA6-90A8-8D8098D29167Q53345727-48DCFA59-F960-490A-9900-159656BBE32FQ89792295-CBEFBE33-7E2E-4907-A7F7-896A2B75E6BCQ93058684-E60413BE-5633-4C1D-9C0F-C547FAE58FF1Q93148457-D1631384-3AB4-4A7C-B086-8C2203DC957F
P50
description
investigador
@es
researcher
@en
name
Haiying He
@en
type
label
Haiying He
@en
prefLabel
Haiying He
@en
P31
P496
0000-0002-3493-2784