about
Artefacts in geometric phase analysis of compound materials.Atomic Defects and Doping of Monolayer NbSe2.Polarization curling and flux closures in multiferroic tunnel junctions.Lateral heterojunctions within monolayer MoSe 2 –WSe 2 semiconductorsQuantitative High-Dynamic-Range Electron Diffraction of Polar Nanodomains in Pb2 ScTaO6Polarization Screening Mechanisms at La0.7Sr0.3MnO3-PbTiO3 Interfaces
P50
description
investigador
@es
researcher
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name
Jonathan J P Peters
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type
label
Jonathan J P Peters
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prefLabel
Jonathan J P Peters
@en
P31
P496
0000-0001-6858-7037