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Q35616669-1EB285C6-6A1E-491E-8A9A-FB6CAC206772
Q35616669-1EB285C6-6A1E-491E-8A9A-FB6CAC206772
BestRank
Statement
http://www.wikidata.org/entity/statement/Q35616669-1EB285C6-6A1E-491E-8A9A-FB6CAC206772
Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current.
P2860
Q35616669-1EB285C6-6A1E-491E-8A9A-FB6CAC206772
BestRank
Statement
http://www.wikidata.org/entity/statement/Q35616669-1EB285C6-6A1E-491E-8A9A-FB6CAC206772
rank
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type
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Statement
wasDerivedFrom
35aacab71984be336159a569395e773840cba0fe
P2860
Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.