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Q37359692-AA9C96F9-A771-4E4E-A097-A840B9669DD9
Q37359692-AA9C96F9-A771-4E4E-A097-A840B9669DD9
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http://www.wikidata.org/entity/statement/Q37359692-AA9C96F9-A771-4E4E-A097-A840B9669DD9
Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials.
P2860
Q37359692-AA9C96F9-A771-4E4E-A097-A840B9669DD9
BestRank
Statement
http://www.wikidata.org/entity/statement/Q37359692-AA9C96F9-A771-4E4E-A097-A840B9669DD9
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wasDerivedFrom
d3155b4325c17c94ec83a080d46427b391986979
P2860
Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation