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Q42049276-3EFCDEAE-1989-4A9C-922C-45AC0054CD35
Q42049276-3EFCDEAE-1989-4A9C-922C-45AC0054CD35
BestRank
Statement
http://www.wikidata.org/entity/statement/Q42049276-3EFCDEAE-1989-4A9C-922C-45AC0054CD35
Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications.
P2860
Q42049276-3EFCDEAE-1989-4A9C-922C-45AC0054CD35
BestRank
Statement
http://www.wikidata.org/entity/statement/Q42049276-3EFCDEAE-1989-4A9C-922C-45AC0054CD35
rank
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type
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Statement
wasDerivedFrom
913aab255b672fb80b0841aba277c70833206b21
P2860
Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes.