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Q44160666-9D3C9492-4CC7-457F-9B4A-26C4D24693DE
Q44160666-9D3C9492-4CC7-457F-9B4A-26C4D24693DE
BestRank
Statement
http://www.wikidata.org/entity/statement/Q44160666-9D3C9492-4CC7-457F-9B4A-26C4D24693DE
Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiO(x) by catalyst-free molecular beam epitaxy.
P2860
Q44160666-9D3C9492-4CC7-457F-9B4A-26C4D24693DE
BestRank
Statement
http://www.wikidata.org/entity/statement/Q44160666-9D3C9492-4CC7-457F-9B4A-26C4D24693DE
rank
NormalRank
type
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Statement
wasDerivedFrom
92f5a945b344e82f57d0a9314b9d451a7be040e7
P2860
Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes.