about
Water desalination with a single-layer MoS2 nanoporeA microprocessor based on a two-dimensional semiconductorAmbient effects on electrical characteristics of CVD-grown monolayer MoS2 field-effect transistors.Highly Oriented Atomically Thin Ambipolar MoSe2 Grown by Molecular Beam Epitaxy.Exfoliated MoS2 in Water without AdditivesLarge-Area Growth of Uniform Single-Layer MoS2 Thin Films by Chemical Vapor Deposition.Metal Induced Growth of Transition Metal Dichalcogenides at Controlled Locations.Booming Development of Group IV-VI Semiconductors: Fresh Blood of 2D Family.Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects.DEVICE TECHNOLOGY. Nanomaterials in transistors: From high-performance to thin-film applications.Chemical Vapor Deposition of Monolayer Mo(1-x)W(x)S2 Crystals with Tunable Band Gaps.Recent advances in transition-metal dichalcogenide based nanomaterials for water splitting.Flexible Device Applications of 2D Semiconductors.Synthesis and fast transfer of monolayer MoS2 on reusable fused silica.Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction.High Responsivity, Large-Area Graphene/MoS2 Flexible Photodetectors.Review Article: Progress in fabrication of transition metal dichalcogenides heterostructure systems.Deconvoluting the Photonic and Electronic Response of 2D Materials: The Case of MoS2.Large-scale arrays of single- and few-layer MoS2 nanomechanical resonators.Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition.Detection of methylation on dsDNA using nanopores in a MoS2 membrane.A General Method for the Chemical Synthesis of Large-Scale, Seamless Transition Metal Dichalcogenide Electronics.Thermodynamically Stable Synthesis of Large-Scale and Highly Crystalline Transition Metal Dichalcogenide Monolayers and their Unipolar n-n Heterojunction Devices.Precisely Aligned Monolayer MoS2 Epitaxially Grown on h-BN basal Plane.Interfacial strength and surface damage characteristics of atomically-thin h-BN, MoS2 and graphene.A new insight for ohmic contacts to MoS2: by tuning MoS2 affinity energies but not metal work-functions.Synthesis of Large-Scale Single-Crystalline Monolayer WS₂ Using a Semi-Sealed Method.Quantitative Analysis of Scattering Mechanisms in Highly Crystalline CVD MoS2 through a Self-Limited Growth Strategy by Interface Engineering.Engineering Chemically Active Defects in Monolayer MoS2 Transistors via Ion-Beam Irradiation and Their Healing via Vapor Deposition of Alkanethiols.Temperature-Related Morphological Evolution of MoS2 Domains on Graphene and Electron Transfer within Heterostructures.Ultraclean and Direct Transfer of a Wafer-Scale MoS2 Thin Film onto a Plastic Substrate.Enhanced quantum efficiency from a mosaic of two dimensional MoS2 formed onto aminosilane functionalised substrates.Growth of Polar Hexagonal Boron Nitride Monolayer on Nonpolar Copper with Unique Orientation.Determination of band offsets at GaN/single-layer MoS2 heterojunctionTwo competing interpretations of Kelvin probe force microscopy on semiconductors put to testTHz time-domain spectroscopy and IR spectroscopy on MoS2Free-standing electronic character of monolayerMoS2in van der Waals epitaxyMagnetoexcitons in large area CVD-grown monolayerMoS2andMoSe2on sapphire
P2860
Q27320854-CEB68986-0A6F-499E-910E-3F87698275B1Q33571900-318DFADF-3B14-433E-ABE2-74297F413AA4Q33826003-E9669F23-2391-4406-BDB0-F9CF27260F63Q33856684-C8DBA296-3BCD-47B7-9A79-D35B90C865C8Q36000847-2623679B-4FC0-4A66-A7E9-F2151A24D73DQ36127775-3E34DF57-3E70-493F-ACEF-0EE23F93EF5FQ37464447-035CC65E-95A9-4876-AEFA-94E8D1A0131DQ37505119-84217C1F-F63D-4354-9F99-19878CC1E194Q38531628-4C255400-5814-4117-A33B-E0A647DB07EAQ38566615-5F1F24B5-B747-478E-A94C-9C3A50D6B8CAQ38582278-BF3479BF-27E5-43B0-BB27-EB52C3433057Q38636438-7A14F860-B5B7-4127-95F2-B5D8A0211FDDQ39278732-AA29F57A-3423-4553-8D98-B5730B29BDC3Q40472467-778E1F80-E451-49E5-A4CD-659DA151B926Q41701292-02015475-A402-4F36-AF4D-CF0A2455F5B8Q42320222-9CD882ED-EDE7-4DC3-85B0-9C4C01FA667CQ42659595-5BD1EA2D-2E97-429A-A3CD-796C32FDFD2FQ46524987-270CA680-2D33-4244-9D14-945DEEE058BFQ46899565-C7CEFA7A-B1A3-44D4-B168-1D764F9C6742Q47735780-927DBCFA-1C56-4F98-B90F-785004FFF188Q47810924-0F0D9239-4557-42A7-B494-96A7BF498742Q47864458-D1520AEB-5D87-4FBC-99AE-5787B66174E7Q47941473-FE2FC7D6-4717-459E-8390-AC570CDE7217Q48910529-AF236163-B0CD-4B1F-8FC6-E381FAFEAF46Q49717856-093BFA60-60D3-4564-AF97-5EF387975B1DQ49994796-A51A5FE8-9708-4734-9EBD-154039F0C376Q50034094-8565B67E-E808-47CA-9F07-0646E6D15F94Q50902733-C405C966-7120-48E9-B2B5-1E6BD970A701Q50985318-527B3A36-D4AF-4155-B180-7DDFFCE83F1DQ51020869-972BA986-1006-4CEE-BE25-37B096792137Q51080033-3A3EABA5-0C95-4F6F-853D-47BBB63A109AQ51303793-9568F95F-6C08-4222-92F4-B1038E45B4DDQ51312340-C70FAC82-672E-431B-B74C-95457E1B2208Q57759584-A3649F30-D19C-42F7-9550-F600A173BB1EQ58801477-221B9667-CE60-4E1D-951C-4385F4D300E9Q59309486-09F73515-C9F8-4DF4-9DEA-1D9ACC472AF6Q59309493-5DB210B2-9FD4-4428-9344-BE53B9D6A22AQ59309497-5D18670F-0525-4B76-B4FE-C288A0FD060E
P2860
description
2015 nî lūn-bûn
@nan
2015年の論文
@ja
2015年論文
@yue
2015年論文
@zh-hant
2015年論文
@zh-hk
2015年論文
@zh-mo
2015年論文
@zh-tw
2015年论文
@wuu
2015年论文
@zh
2015年论文
@zh-cn
name
Large-Area Epitaxial Monolayer MoS2.
@ast
Large-Area Epitaxial Monolayer MoS2.
@en
type
label
Large-Area Epitaxial Monolayer MoS2.
@ast
Large-Area Epitaxial Monolayer MoS2.
@en
prefLabel
Large-Area Epitaxial Monolayer MoS2.
@ast
Large-Area Epitaxial Monolayer MoS2.
@en
P2093
P2860
P50
P356
P1433
P1476
Large-Area Epitaxial Monolayer MoS2.
@en
P2093
Aleksandra Radenovic
Daria Krasnozhon
Dumitru Dumcenco
Kolyo Marinov
Ming-Wei Chen
Oriol Lopez Sanchez
Philippe Gillet
Predrag Lazić
Simone Bertolazzi
Yen-Cheng Kung
P2860
P304
P356
10.1021/ACSNANO.5B01281
P407
P577
2015-04-06T00:00:00Z