about
Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdO x Membrane in Electrolyte-Insulator-Semiconductor StructureAnisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory.Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials.
P2860
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年論文
@yue
2014年論文
@zh-hant
2014年論文
@zh-hk
2014年論文
@zh-mo
2014年論文
@zh-tw
2014年论文
@wuu
2014年论文
@zh
2014年论文
@zh-cn
name
RRAM characteristics using a new Cr/GdOx/TiN structure.
@ast
RRAM characteristics using a new Cr/GdOx/TiN structure.
@en
type
label
RRAM characteristics using a new Cr/GdOx/TiN structure.
@ast
RRAM characteristics using a new Cr/GdOx/TiN structure.
@en
prefLabel
RRAM characteristics using a new Cr/GdOx/TiN structure.
@ast
RRAM characteristics using a new Cr/GdOx/TiN structure.
@en
P2093
P2860
P356
P1476
RRAM characteristics using a new Cr/GdOx/TiN structure.
@en
P2093
Debanjan Jana
Mrinmoy Dutta
Siddheswar Maikap
Subhranu Samanta
P2860
P2888
P356
10.1186/1556-276X-9-680
P577
2014-12-17T00:00:00Z
P6179
1035944376