Digital-Analog Quantum Simulation of Spin Models in Trapped Ions.
about
Digital-analog quantum simulation of generalized Dicke models with superconducting circuits.A Single-Ion Reservoir as a High-Sensitive Sensor of Electric Signals.Experimental quantum simulation of fermion-antifermion scattering via boson exchange in a trapped ion.Factorization and Criticality in Finite XXZ Systems of Arbitrary Spin.
P2860
Digital-Analog Quantum Simulation of Spin Models in Trapped Ions.
description
article científic
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article scientifique
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articolo scientifico
@it
artigo científico
@pt
bilimsel makale
@tr
scientific article published on 29 July 2016
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vedecký článok
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vetenskaplig artikel
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videnskabelig artikel
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vědecký článek
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name
Digital-Analog Quantum Simulation of Spin Models in Trapped Ions.
@en
Digital-Analog Quantum Simulation of Spin Models in Trapped Ions.
@nl
type
label
Digital-Analog Quantum Simulation of Spin Models in Trapped Ions.
@en
Digital-Analog Quantum Simulation of Spin Models in Trapped Ions.
@nl
prefLabel
Digital-Analog Quantum Simulation of Spin Models in Trapped Ions.
@en
Digital-Analog Quantum Simulation of Spin Models in Trapped Ions.
@nl
P2860
P50
P356
P1433
P1476
Digital-Analog Quantum Simulation of Spin Models in Trapped Ions.
@en
P2093
Iñigo Arrazola
P2860
P2888
P356
10.1038/SREP30534
P407
P577
2016-07-29T00:00:00Z
P698
P818
1602.06248