Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers.
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Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory designTime-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5-x/W device.Development and application of multiple-probe scanning probe microscopes.Spatially-resolved mapping of history-dependent coupled electrochemical and electronical behaviors of electroresistive NiO.Conductive-bridging random access memory: challenges and opportunity for 3D architecture.A learnable parallel processing architecture towards unity of memory and computing.Atomic View of Filament Growth in Electrochemical Memristive ElementsExcellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface.Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors.25th anniversary article: what can be done with the Langmuir-Blodgett method? Recent developments and its critical role in materials science.Structurally engineered stackable and scalable 3D titanium-oxide switching devices for high-density nanoscale memory.Solid surface vs. liquid surface: nanoarchitectonics, molecular machines, and DNA origami.Flexible Ionic-Electronic Hybrid Oxide Synaptic TFTs with Programmable Dynamic Plasticity for Brain-Inspired Neuromorphic Computing.High performance bi-layer atomic switching devices.Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials.Switching mechanism and reverse engineering of low-power Cu-based resistive switching devices.Habituation/Fatigue behavior of a synapse memristor based on IGZO-HfO2 thin film.Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/nanoelectronic logic and memory architectures.Copper atomic-scale transistors.Memristive stochastic plasticity enables mimicking of neural synchrony: Memristive circuit emulates an optical illusion.Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories.Conducting-insulating transition in adiabatic memristive networks.Comment on real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte- based ReRAM.A current-driven single-atom memory.Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters.Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing.Nanoscale cation motion in TaO(x), HfO(x) and TiO(x) memristive systems.Amphiphile nanoarchitectonics: from basic physical chemistry to advanced applications.Memristor-Based Analog Computation and Neural Network Classification with a Dot Product Engine.On-Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics.Electrochemical Tantalum Oxide for Resistive Switching Memories.Nanoionic devices enabling a multitude of new features.Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer.Unveiling the Switching Riddle of Silver Tetracyanoquinodimethane Towards Novel Planar Single-Crystalline Electrochemical Metallization Memories.Electrochemical metallization switching with a platinum group metal in different oxides.Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor.Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices.Switching kinetics of electrochemical metallization memory cells.Chameleonic electrochemical metallization cells: dual-layer solid electrolyte-inducing various switching behaviours.Ag2S atomic switch-based 'tug of war' for decision making.
P2860
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P2860
Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers.
description
article científic
@ca
article scientifique
@fr
articol științific
@ro
articolo scientifico
@it
artigo científico
@gl
artigo científico
@pt
artigo científico
@pt-br
artikel ilmiah
@id
artikull shkencor
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artículo científico
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name
Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers.
@en
Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers.
@nl
type
label
Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers.
@en
Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers.
@nl
prefLabel
Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers.
@en
Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers.
@nl
P2093
P2860
P356
P1433
P1476
Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers.
@en
P2093
Kazuya Terabe
Masakazu Aono
Tohru Tsuruoka
Tsuyoshi Hasegawa
P2860
P304
P356
10.1002/ADMA.201102597
P407
P577
2011-09-29T00:00:00Z