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Visualizing nanoscale excitonic relaxation properties of disordered edges and grain boundaries in monolayer molybdenum disulfideThe Effect of Preparation Conditions on Raman and Photoluminescence of Monolayer WS2.Optical polarization and intervalley scattering in single layers of MoS2 and MoSe2.Probing the origin of excitonic states in monolayer WSe2.Unusual dimensionality effects and surface charge density in 2D Mg(OH)2.Ultrafast response of monolayer molybdenum disulfide photodetectorsEmergence of electron coherence and two-color all-optical switching in MoS2 based on spatial self-phase modulationAnomalously robust valley polarization and valley coherence in bilayer WS2Coherent longitudinal acoustic phonon approaching THz frequency in multilayer Molybdenum Disulphide.Water-Assisted Synthesis of Molybdenum Disulfide Film with Single Organic Liquid Precursor.Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction photodiode.Neutral and charged inter-valley biexcitons in monolayer MoSe2.Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy.Charge-transfer-based gas sensing using atomic-layer MoS2.Light generation and harvesting in a van der Waals heterostructurePreparation and characterization of few-layer MoS2 nanosheets and their good nonlinear optical responses in the PMMA matrix.Valley and spin dynamics in MoSe2 two-dimensional crystals.Probing the role of interlayer coupling and coulomb interactions on electronic structure in few-layer MoSe₂ nanostructures.Monolayer semiconductor nanocavity lasers with ultralow thresholds.Electrical control of second-harmonic generation in a WSe2 monolayer transistor.Highly anisotropic and robust excitons in monolayer black phosphorus.Dispersive growth and laser-induced rippling of large-area singlelayer MoS2 nanosheets by CVD on c-plane sapphire substrate.Revealing Optical Properties of Reduced-Dimensionality Materials at Relevant Length Scales.Piezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum disulfide piezotronics.Onset of two-dimensional superconductivity in space charge doped few-layer molybdenum disulfide.Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction.Electric-field-induced strong enhancement of electroluminescence in multilayer molybdenum disulfide.Anomalous temperature-dependent spin-valley polarization in monolayer WS2.Producing air-stable monolayers of phosphorene and their defect engineering.Plasma functionalization for cyclic transition between neutral and charged excitons in monolayer MoS2Triangular lattice exciton model.Exciton formation in monolayer transition metal dichalcogenides.Spatial non-uniformity in exfoliated WS2 single layers.Near-infrared light triggered superior photocatalytic activity from MoS2-NaYF4:Yb(3+)/Er(3+) nanocomposites.Interferometric Motion Detection in Atomic Layer 2D Nanostructures: Visualizing Signal Transduction Efficiency and Optimization PathwaysPolaritons in layered two-dimensional materials.Synthesis of large-area multilayer hexagonal boron nitride for high material performanceExciton-dominated Dielectric Function of Atomically Thin MoS2 Films.Nonlinear photoluminescence in monolayer WS2: parabolic emission and excitation fluence-dependent recombination dynamics.Controllable Growth of Large-Size Crystalline MoS2 and Resist-Free Transfer Assisted with a Cu Thin Film
P2860
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P2860
description
2012 nî lūn-bûn
@nan
2012年の論文
@ja
2012年学术文章
@wuu
2012年学术文章
@zh
2012年学术文章
@zh-cn
2012年学术文章
@zh-hans
2012年学术文章
@zh-my
2012年学术文章
@zh-sg
2012年學術文章
@yue
2012年學術文章
@zh-hant
name
Tightly bound trions in monolayer MoS2.
@en
Tightly bound trions in monolayer MoS2.
@nl
type
label
Tightly bound trions in monolayer MoS2.
@en
Tightly bound trions in monolayer MoS2.
@nl
prefLabel
Tightly bound trions in monolayer MoS2.
@en
Tightly bound trions in monolayer MoS2.
@nl
P2093
P356
P1433
P1476
Tightly bound trions in monolayer MoS2.
@en
P2093
Changgu Lee
Gwan Hyoung Lee
Keliang He
Kin Fai Mak
Tony F Heinz
P2888
P304
P356
10.1038/NMAT3505
P407
P577
2012-12-02T00:00:00Z
P5875
P6179
1009145791