about
Virtual substrate method for nanomaterials characterizationStrong enhancement of Raman scattering from a bulk-inactive vibrational mode in few-layer MoTe₂.Ambipolar MoTe2 transistors and their applications in logic circuits.Boost up carrier mobility for ferroelectric organic transistor memory via buffering interfacial polarization fluctuationSimple and scalable gel-based separation of metallic and semiconducting carbon nanotubes.Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities.Parity effect of bipolar quantum Hall edge transport around graphene antidots.Origin of the relatively low transport mobility of graphene grown through chemical vapor depositionEdge mixing dynamics in graphene p-n junctions in the quantum Hall regime.In situ observation of the formation process for free-standing Au nanowires with a scanning electron microscope.Hunting for Monolayer Oxide Nanosheets and Their Architectures.Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps.Patterning technology for solution-processed organic crystal field-effect transistors.Self-assembly of semiconductor/insulator interfaces in one-step spin-coating: a versatile approach for organic field-effect transistors.Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors.Self-aligned formation of sub 1 nm gaps utilizing electromigration during metal deposition.Barrier inhomogeneities at vertically stacked graphene-based heterostructures.Single-crystalline nanogap electrodes: enhancing the nanowire-breakdown process with a gaseous environment.Low operating bias and matched input-output characteristics in graphene logic inverters.Controlling the thermoelectric effect by mechanical manipulation of the electron's quantum phase in atomic junctions.High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits.Quantitative Raman spectrum and reliable thickness identification for atomic layers on insulating substrates.Direct formation of micro-/nanocrystalline 2,5-dimethyl-N,N'-dicyanoquinonediimine complexes on SiO2/Si substrates and multiprobe measurement of conduction properties.Unveiling the piezoelectric nature of polar α-phase P(VDF-TrFE) at quasi-two-dimensional limit.Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping.Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts.Self-limiting layer-by-layer oxidation of atomically thin WSe2.Determination of the number of atoms present in nano contact based on shot noise measurements with highly stable nano-fabricated electrodes.Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning.Site-Selection in Single-Molecule Junction for Highly Reproducible Molecular Electronics.Origin of Noise in Layered MoTe₂ Transistors and its Possible Use for Environmental Sensors.Gate-voltage dependence of zero-bias anomalies in multiwall carbon nanotubes.Highly stable Au atomic contacts covered with benzenedithiol under ambient conditions.Role of edge and bulk currents through a gate barrier in nonlocal resistance of GaAs/AlxGa1-xAs.Structure and transport properties of the interface between CVD-grown graphene domainsThickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 LayersEnhanced current-rectification in bilayer graphene with an electrically tuned sloped bandgapFlexible SnO2 hollow nanosphere film based high-performance ultraviolet photodetectorLow-Cost Fully Transparent Ultraviolet Photodetectors Based on Electrospun ZnO-SnO2Heterojunction NanofibersMechanism of apparent reflection of electrons from extra probes investigated by the magnetic electron-focusing effect
P50
Q33762949-07EE61F9-6083-4C02-AE79-CE90BAB0634AQ34411364-CFBA2DC6-DB74-41F9-AF4E-687059AA7A17Q34413231-AAA2C3FA-B582-4074-A324-4BBD3120FA06Q34578599-EF3404AF-0831-424E-8FB6-8415AB783776Q34951779-D91B7929-6D09-470E-9D13-AF0ADB0821D3Q35742013-F25DA1B8-0CC1-4548-A709-DB20FA4F7903Q35796493-F07592B5-4C0B-4225-8FCC-3B2E17653189Q35855719-DFBBB20B-22DE-42D6-903F-EE9FD9803C87Q36059293-6795C8C5-0498-41EC-A810-AE4AC6FB9975Q36272622-B07AEFB6-EEC8-4743-8278-AF793DC0A784Q36500356-6854076E-5D28-4E3B-B51E-59874272F592Q37325422-D892BD06-69AB-4030-90A1-184747B80F0AQ37386490-77C6FAFE-8E7C-417A-A346-C51612CE44B3Q38094959-8E5F060B-0CAE-4FF8-8039-B0F9B6179226Q38643122-28539959-0E74-4343-953D-A8D7BFBFEBA1Q39307950-E2E349F4-DE65-4D65-9CAA-5FCDA95BD1BEQ39311181-9413CEDF-001B-4FEF-9886-AC0EC138274FQ39538768-50DA5846-318A-454F-A52A-C116850AD4EAQ39867647-950617B0-C877-4493-8D1C-810B32A724F5Q41366789-E56E6002-445E-4A09-8C8D-9AF52E4C65C3Q44739071-6EDE7899-194F-4ED2-A821-01A5C7C7B056Q46627889-18445181-0E6D-426E-9935-D1CA8C3E6D64Q46897258-5D99ADE4-300C-4565-886A-FAE500E94D99Q48262440-AD62AEF2-8E78-4CAA-8B5B-2FBCF3FE0FFBQ50071403-6ED9FD8E-CA3C-4EFA-BEAA-AFF895CD0949Q50870823-7863E522-A2D3-4C44-B97A-53FDDEC4D2CFQ51012009-DEE26A45-DE16-4252-BC4D-836463C3ECC7Q51293991-8C7EE76E-55C8-4E3A-B5DA-7050FB58888AQ51324593-7F0AB8A3-A619-4B23-A304-DDFE11373C65Q51577594-CDADF165-5B7C-4992-84D3-2BDF34616444Q51704267-B51F0117-ADC7-42C0-995B-097F5B8341BFQ52958942-6CC1F84F-8967-48DE-8D2F-71C669BDBF29Q53518734-6A7CD3B3-6097-4C18-A4A6-01ECC63886EBQ54264201-DDA51016-7738-4E70-B147-AEA122EBB43FQ57163459-69D1AEA8-6B57-46A2-A405-53DE9252D86BQ57785821-DEAFD08F-88B9-4180-8896-82CCCB601055Q57785868-2E3C6435-40ED-4E80-8980-2ACDB441511EQ58202366-6C766E46-4B32-4777-82C8-9EF1F70E268EQ58202375-A3B87FB5-FF2B-4128-A1EE-9668183DBCDCQ78114788-265AEB6D-25C3-491D-B54D-B6673B06A32E
P50
description
researcher
@en
wetenschapper
@nl
հետազոտող
@hy
name
Kazuhito Tsukagoshi
@ast
Kazuhito Tsukagoshi
@en
Kazuhito Tsukagoshi
@es
Kazuhito Tsukagoshi
@nl
type
label
Kazuhito Tsukagoshi
@ast
Kazuhito Tsukagoshi
@en
Kazuhito Tsukagoshi
@es
Kazuhito Tsukagoshi
@nl
prefLabel
Kazuhito Tsukagoshi
@ast
Kazuhito Tsukagoshi
@en
Kazuhito Tsukagoshi
@es
Kazuhito Tsukagoshi
@nl
P106
P31
P496
0000-0001-9710-2692