Void formation on ultrathin thermal silicon oxide films on the Si(100) surface
about
Chemical and kinetic insights into the Thermal Decomposition of an Oxide Layer on Si(111) from Millisecond Photoelectron Spectroscopy.Inhomogeneous decomposition of ultrathin oxide films on Si(100): application of Avrami kinetics to thermal desorption spectra.Controlled growth of SiO2 tunnel barrier and crystalline Si quantum wells for Si resonant tunneling diodesProduction of nanostructures of silicon on silicon by atomic self-organization observed by scanning tunneling microscopy
P2860
Void formation on ultrathin thermal silicon oxide films on the Si(100) surface
description
article
@en
im August 1996 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в серпні 1996
@uk
name
Void formation on ultrathin thermal silicon oxide films on the Si
@nl
Void formation on ultrathin thermal silicon oxide films on the Si(100) surface
@en
type
label
Void formation on ultrathin thermal silicon oxide films on the Si
@nl
Void formation on ultrathin thermal silicon oxide films on the Si(100) surface
@en
prefLabel
Void formation on ultrathin thermal silicon oxide films on the Si
@nl
Void formation on ultrathin thermal silicon oxide films on the Si(100) surface
@en
P2093
P356
P1476
Void formation on ultrathin thermal silicon oxide films on the Si(100) surface
@en
P2093
Alan C. Seabaugh
Robert M. Wallace
P304
P356
10.1063/1.117388
P407
P577
1996-08-26T00:00:00Z