Ultraviolet Photo-Annealing Process for Low Temperature Processed Sol-Gel Zinc Tin Oxide Thin Film Transistors
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Ultraviolet Photo-Annealing Process for Low Temperature Processed Sol-Gel Zinc Tin Oxide Thin Film Transistors
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article
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im Januar 2012 veröffentlichter wissenschaftlicher Artikel
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wetenschappelijk artikel
@nl
наукова стаття, опублікована у 2012
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name
Ultraviolet Photo-Annealing Pr ...... in Oxide Thin Film Transistors
@en
Ultraviolet Photo-Annealing Pr ...... in Oxide Thin Film Transistors
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Ultraviolet Photo-Annealing Pr ...... in Oxide Thin Film Transistors
@en
Ultraviolet Photo-Annealing Pr ...... in Oxide Thin Film Transistors
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Ultraviolet Photo-Annealing Pr ...... in Oxide Thin Film Transistors
@en
Ultraviolet Photo-Annealing Pr ...... in Oxide Thin Film Transistors
@nl
P2093
P2860
P356
P1476
Ultraviolet Photo-Annealing Pr ...... in Oxide Thin Film Transistors
@en
P2093
Byeong-Soo Bae
Jun-Hyuck Jeon
Seok-Jun Seo
Young Hwan Hwang
P2860
P356
10.1149/2.013204ESL
P577
2012-01-01T00:00:00Z