Indium gallium phosphide

Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. Indium gallium phosphide is a solid solution of indium phosphide and gallium phosphide. A different composition of GaInP, lattice matched to the underlying GaInAs, is utilized as the high energy junction GaInP/GaInAs/Ge triple junction photovoltaic cells.

Indium gallium phosphide

Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. Indium gallium phosphide is a solid solution of indium phosphide and gallium phosphide. A different composition of GaInP, lattice matched to the underlying GaInAs, is utilized as the high energy junction GaInP/GaInAs/Ge triple junction photovoltaic cells.