Indium nitride
Indium nitride (InN) is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics. The bandgap of InN has now been established as ~0.7 eV depending on temperature (the obsolete value is 1.97 eV). The effective electron mass has been recently determined by high magnetic field measurements, m* =0.055 m0. Alloyed with GaN, the ternary system InGaN has a direct bandgap span from the infrared (0.69 eV) to the ultraviolet (3.4 eV). Thin layers of InN can be grown using metalorganic chemical vapour deposition (MOCVD).
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Aluminium nitrideGallium nitrideInNIndex of physics articles (I)Indium(III) nitrideIndium(III) oxideIndium aluminium nitrideIndium antimonideIndium arsenideIndium gallium nitrideIndium phosphideInternational Conference on Nitride SemiconductorsInternational Workshop on Nitride SemiconductorsList of CAS numbers by chemical compoundList of inorganic compoundsList of semiconductor materialsList of superconductorsMetalorganic vapour-phase epitaxyMolybdenum ditellurideNitrideNon linear piezoelectric effects in polar semiconductorsPiezophototronicsPiezotronicsTrimethylindium
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Indium nitride
Indium nitride (InN) is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics. The bandgap of InN has now been established as ~0.7 eV depending on temperature (the obsolete value is 1.97 eV). The effective electron mass has been recently determined by high magnetic field measurements, m* =0.055 m0. Alloyed with GaN, the ternary system InGaN has a direct bandgap span from the infrared (0.69 eV) to the ultraviolet (3.4 eV). Thin layers of InN can be grown using metalorganic chemical vapour deposition (MOCVD).
has abstract
El nitruro de indio (InN) es u ...... hasta el ultravioleta (3.4eV)
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Indium nitride (InN) is a smal ...... cal vapour deposition (MOCVD).
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Indiumnitrid (InN) ist eine an ...... ms aus der Gruppe der Nitride.
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Le nitrure d'indium (InN) est ...... d'azote (N) et d'indium (In).
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Нитрид индия (InN) — бинарное ...... формулой InN,чёрные кристаллы.
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نتريد إنديوم ثلاثي مركب كيميائي له الصيغة InN ، وهي عبارة عن مادة نصف ناقلة .
@ar
氮化銦（InN）是一種小能隙的半導體材料，在太陽能電池及其他 ...... 奈米簇，其中依照金兹堡－朗道方程，較小的尺寸增高了臨界磁場。
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窒化インジウム（ちっかインジウム、indium nitrid ...... ると金属インジウムのチェーンまたはナノクラスタが原因である。
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alternative name
Indium(III) nitride
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Indium nitride
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477,313,431
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comment
El nitruro de indio (InN) es u ...... l valor anterior es 1.97 eV).
@es
Indium nitride (InN) is a smal ...... cal vapour deposition (MOCVD).
@en
Indiumnitrid (InN) ist eine an ...... ms aus der Gruppe der Nitride.
@de
Le nitrure d'indium (InN) est ...... d'azote (N) et d'indium (In).
@fr
Нитрид индия (InN) — бинарное ...... формулой InN,чёрные кристаллы.
@ru
نتريد إنديوم ثلاثي مركب كيميائي له الصيغة InN ، وهي عبارة عن مادة نصف ناقلة .
@ar
氮化銦（InN）是一種小能隙的半導體材料，在太陽能電池及其他 ...... 奈米簇，其中依照金兹堡－朗道方程，較小的尺寸增高了臨界磁場。
@zh
窒化インジウム（ちっかインジウム、indium nitrid ...... 化物とのヘテロエピタキシャル成長は難しいことが知られている。
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label
Indium nitride
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Indiumnitrid
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Nitrure d'indium
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Nitruro de indio
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Нитрид индия
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نتريد إنديوم ثلاثي
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氮化銦
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窒化インジウム
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