Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices

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Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions.Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe2O4 Thin Film.Multi-valued and Fuzzy Logic Realization using TaOx Memristive Devices.

P2860

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Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices

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http://www.wikidata.org/entity/Q27324046

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2016 nî lūn-bûn

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2016 թուականին հրատարակուած գիտական յօդուած

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2016 թվականին հրատարակված գիտական հոդված

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2016年の論文

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2016年論文

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2016年論文

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2016年論文

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2016年論文

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2016年論文

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2016年论文

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name

Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices

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Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices

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Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices

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type

Item

label

Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices

@ast

Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices

@en

Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices

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prefLabel

Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices

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Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices

@en

Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices

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P1476

Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices

@en

P2093

Bernd Roesgen

http://www.w3.org/2001/XMLSchema#string

Eike Linn

http://www.w3.org/2001/XMLSchema#string

Lutz Nielen

http://www.w3.org/2001/XMLSchema#string

Vikas Rana

http://www.w3.org/2001/XMLSchema#string

P2860

Complementary resistive switches for passive nanocrossbar memories

'Memristive' switches enable 'stateful' logic operations via material implication.

A learnable parallel processing architecture towards unity of memory and computing.

Implementation of Complete Boolean Logic Functions in Single Complementary Resistive Switch

Memristive devices for computing.

Low-current operations in 4F(2)-compatible Ta2O5-based complementary resistive switches.

Beyond von Neumann--logic operations in passive crossbar arrays alongside memory operations.

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srep23967

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23967

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scholarly article

P3181

2480094

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10.1038/SREP23967

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English

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Rainer Waser

Thomas Breuer

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2016-01-01T00:00:00Z

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299633035

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1013876531

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Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices

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P2860

P2860

Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices

description

name

type

label

prefLabel

P1433

P1476

P2093

P2860

P2888

P304

P31

P3181

P356

P407

P478

P50

P577

P5875

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P2888

P304

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