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Complementary resistive switches for passive nanocrossbar memories

Complementary resistive switches for passive nanocrossbar memories

http://www.wikidata.org/entity/Q28280012

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Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices Status and Prospects of ZnO-Based Resistive Switching Memory Devices.Plasticity in memristive devices for spiking neural networks Nanobatteries in redox-based resistive switches require extension of memristor theory A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures Engineering nonlinearity into memristors for passive crossbar applications Enhanced stability of filament-type resistive switching by interface engineering Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays.Simplified ZrTiO x -based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode.Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors TaOx-based resistive switching memories: prospective and challenges.Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory Functionalized graphitic carbon nitride for metal-free, flexible and rewritable nonvolatile memory device via direct laser-writing Physical and chemical mechanisms in oxide-based resistance random access memory.Conductive-bridging random access memory: challenges and opportunity for 3D architecture.Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5-Ta system.Giant Electroresistive Ferroelectric Diode on 2DEG Resistive Switching of Individual, Chemically Synthesized TiO2 Nanoparticles.Memristive crypto primitive for building highly secure physical unclonable functions.All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure.Implementation of Complete Boolean Logic Functions in Single Complementary Resistive Switch Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiOx/TiN.Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface.Spectromicroscopic insights for rational design of redox-based memristive devices.Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM.Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases.Trilayer Tunnel Selectors for Memristor Memory Cells Selector-free resistive switching memory cell based on BiFeO3 nano-island showing high resistance ratio and nonlinearity factor.Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions.Memory window engineering of Ta2O5-x oxide-based resistive switches via incorporation of various insulating frames.Effect of Oxygen-deficiencies on Resistance Switching in Amorphous YFe0.5Cr0.5O3-d films Linearized Programming of Memristors for Artificial Neuro-Sensor Signal Processing.Unsupervised learning in probabilistic neural networks with multi-state metal-oxide memristive synapses.Effect of halide-mixing on the switching behaviors of organic-inorganic hybrid perovskite memory.25th anniversary article: metal oxide particles in materials science: addressing all length scales.Structurally engineered stackable and scalable 3D titanium-oxide switching devices for high-density nanoscale memory.Application of phase-change materials in memory taxonomy.Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode.

P2860

Q27320961-4632AE20-3ABB-4320-95F7-0914A8DF60BF Q27324046-39A96518-CD0D-4D6B-8B1B-D486458132DF Q28079551-611026FB-2563-4591-9CA6-FB4732CD632F Q28085560-E90176BB-2FE9-455F-9003-2A1095044592 Q28289484-0854E59F-E029-4F95-976A-FA9758CA44B9 Q29031975-E2EB9E6E-7D71-4032-A691-023D6A714FBC Q29308363-1A3EE314-2130-4297-BE58-5F94CF308A79 Q33623343-67F4725F-81CB-4E81-8250-71E6FCE76684 Q33704787-E27F061D-EBF1-44EC-AA36-94C106CCA03D Q33716896-D876B801-C977-41E9-9DBF-94C545B9D108 Q33780932-FC99B1AC-816A-47A7-8005-AD5228C7309F Q34014040-2CD6F20F-0758-4AC7-869E-FFA2E092CEC8 Q34294874-04CAD85B-D598-4E51-9FA7-30D0988F8A04 Q35215248-AF0843AE-CB2F-4394-AB7E-970DD49AA753 Q35298445-17CBFEC2-C257-49D5-86E7-0AD953868DD1 Q35547811-696E0425-78BA-4C78-894A-BEAE11347629 Q35613164-5F0F1707-737D-4E5A-9850-5982A9B6CA26 Q35650982-5D0C3C68-FCF3-48C3-A6D7-86C4EA03AF3C Q35833712-750D7448-5786-49A3-A8D4-66AEBAF2F9ED Q35913555-1470E93B-EBC0-4E01-BFEF-9848DACE3F93 Q35973457-3D17E781-242A-4E41-A38B-5283CDB03ED4 Q36125896-38F76DE4-7206-4BB6-98B1-F00D769D0FE7 Q36187525-E67A9450-8F39-4880-A8E7-E400C4D4A178 Q36189095-A873DDAB-3DB1-4B2A-BD34-AFEFB87B29F6 Q36218166-E67FE40F-816F-4CC0-A194-EFBDAFD5E415 Q36251817-9103706D-669B-49F3-BD45-AA5FB3B3DCB9 Q36349320-EF0CB6EB-D33E-49A3-A185-F99A25137A0D Q36528612-E38EEAE2-5254-4B34-AE53-8B310BAFFB8E Q36533009-A060F794-53E3-4F64-B27C-E3C3D3860BE9 Q36713677-7A224DFE-1A82-40E1-BD94-1272587CBC3F Q36774420-CF203C9B-F661-44FE-A549-04D30C96FD62 Q37121737-651B80E3-5BEA-49BB-A666-C96ED54397C7 Q37121854-E3965477-514A-4C5D-B66A-7F6F01BB6228 Q37245039-CADDA368-1043-4AEB-8B56-B405864AC411 Q37323980-281CB2B4-7979-4A20-A827-24C80EEE7DC6 Q37686626-3E1E4B3A-1725-4965-BD78-1735B7B26C9A Q38164312-83B407B8-B5AD-44E8-AC29-9C5630D12529 Q38432151-B8941B2B-FAC2-4623-BA5B-064F33FA0213 Q38652350-5916C74A-B356-4979-8A86-F14B9DDB4E88 Q38668588-0E07DEFA-8669-4007-B145-4DC3CD09E958

P2860

Complementary resistive switches for passive nanocrossbar memories

http://www.wikidata.org/entity/Q28280012

description

2010 nî lūn-bûn

@nan

2010 թուականի Մայիսին հրատարակուած գիտական յօդուած

@hyw

2010 թվականի մայիսին հրատարակված գիտական հոդված

@hy

2010年の論文

@ja

2010年論文

@yue

2010年論文

@zh-hant

2010年論文

@zh-hk

2010年論文

@zh-mo

2010年論文

@zh-tw

2010年论文

@wuu

name

Complementary resistive switches for passive nanocrossbar memories

@ast

Complementary resistive switches for passive nanocrossbar memories

@en

Complementary resistive switches for passive nanocrossbar memories

@nl

type

label

Complementary resistive switches for passive nanocrossbar memories

@ast

Complementary resistive switches for passive nanocrossbar memories

@en

Complementary resistive switches for passive nanocrossbar memories

@nl

prefLabel

Complementary resistive switches for passive nanocrossbar memories

@ast

Complementary resistive switches for passive nanocrossbar memories

@en

Complementary resistive switches for passive nanocrossbar memories

@nl

P1433

Q28280012-2317B3F4-4F1E-4D3F-907F-9024BD5D4129

P1476

Q28280012-9DE58B2E-4F02-48A8-BC15-FEB51C286EF9

P2093

Q28280012-3093706D-4303-4D6C-AAB8-DD19050A0A60

Q28280012-4C43BA1C-D3C3-4E81-A5BD-8690A8AB58FF

Q28280012-4FB9481E-CFFC-479E-9E0C-5BCD4ACF6250

Q28280012-BCDD176B-2055-4ABE-BC5F-555B7915F6EC

P2888

Q28280012-A603B587-455A-4484-B1CE-1A5FB579EF26

P304

Q28280012-10615BD1-87AD-4AF1-BAF1-F44773B87003

P31

Q28280012-E9A70C01-DD4C-408E-BF97-B731A29FD889

P3181

Q28280012-472A936D-4B10-4BD1-9CD0-FFF1D1253962

P356

Q28280012-82FB9D17-2E23-4B83-82D9-0E817980AB06

P407

Q28280012-CA8B2B47-FDAD-4D77-804E-812A1F0C25DB

P433

Q28280012-172C661A-18C0-4D23-BEAC-46909399387E

P478

Q28280012-D45DAF02-432E-46CA-954F-BD8A739BEB51

P577

Q28280012-711EDCD5-9719-4B64-A32D-813A6C9CEA95

P5875

Q28280012-9F331207-AF31-417C-8507-6FEEFC3F878C

P6179

Q28280012-8FE3F7E0-B36A-471D-95D8-E4BB42DBC67D

P698

Q28280012-8D181B74-3BC9-49B4-8DA2-9CA0DA970947

P3181

P356

P1433

Nature Materials

P1476

Complementary resistive switches for passive nanocrossbar memories

@en

P2093

Carsten Kügeler

http://www.w3.org/2001/XMLSchema#string

Eike Linn

http://www.w3.org/2001/XMLSchema#string

Rainer Waser

http://www.w3.org/2001/XMLSchema#string

Roland Rosezin

http://www.w3.org/2001/XMLSchema#string

P2888

P304

403-6

http://www.w3.org/2001/XMLSchema#string

P31

scholarly article

P3181

2441258

http://www.w3.org/2001/XMLSchema#string

P356

10.1038/NMAT2748

http://www.w3.org/2001/XMLSchema#string

P407

P433

5

http://www.w3.org/2001/XMLSchema#string

P478

9

http://www.w3.org/2001/XMLSchema#string

P577

2010-05-01T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P5875

43183493

http://www.w3.org/2001/XMLSchema#string

P6179

1041571890

http://www.w3.org/2001/XMLSchema#string

P698

20400954

http://www.w3.org/2001/XMLSchema#string