High-density magnetoresistive random access memory operating at ultralow voltage at room temperature.
about
Self-biased 215 MHz magnetoelectric NEMS resonator for ultra-sensitive DC magnetic field detectionRoom temperature multiferroicity in Bi(4.2)K(0.8)Fe(2)O(9+δ).Multiple magnetoelectric coupling effect in BaTiO3/Sr2CoMoO6 heterostructures.Strain-controlled magnetic domain wall propagation in hybrid piezoelectric/ferromagnetic structures.Engineering the interlayer exchange coupling in magnetic trilayers.Transcriptional repression of cancer stem cell marker CD133 by tumor suppressor p53.Magnetization switching by combining electric field and spin-transfer torque effects in a perpendicular magnetic tunnel junction.The memory effect of magnetoelectric coupling in FeGaB/NiTi/PMN-PT multiferroic heterostructureFerroelastic switching in a layered-perovskite thin film.Magnetization Reversal by Out-of-plane Voltage in BiFeO3-based Multiferroic Heterostructures.Dynamic in situ observation of voltage-driven repeatable magnetization reversal at room temperature.Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions.Four-state memory based on a giant and non-volatile converse magnetoelectric effect in FeAl/PIN-PMN-PT structure.Strain engineering induced interfacial self-assembly and intrinsic exchange bias in a manganite perovskite filmNon-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film HeterostructuresBioinspired greigite magnetic nanocrystals: chemical synthesis and biomedicine applicationsBinary switching in a 'symmetric' potential landscapeQuantification of strain and charge co-mediated magnetoelectric coupling on ultra-thin Permalloy/PMN-PT interfaceGiant electrical modulation of magnetization in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(011) heterostructure.Effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown Fe81Ga19Voltage control of magnetism in multiferroic heterostructures.Effect of strain on voltage-controlled magnetism in BiFeO₃-based heterostructures.Graphene/h-BN Heterostructures for Vertical Architecture of RRAM Design.Deterministic control of magnetic vortex wall chirality by electric field.Non-volatile 180° magnetization reversal by an electric field in multiferroic heterostructures.Current controlled switching of impedance in magnetic conductor with tilted anisotropy easy axis and its applications.Film size-dependent voltage-modulated magnetism in multiferroic heterostructures.Acoustically actuated ultra-compact NEMS magnetoelectric antennas.Fast 180° magnetization switching in a strain-mediated multiferroic heterostructure driven by a voltage.Full 180° magnetization reversal with electric fields.Magnetostrictive thin films for microwave spintronics.Voltage tuning of ferromagnetic resonance with bistable magnetization switching in energy-efficient magnetoelectric composites.Magnetoelectric quasi-(0-3) nanocomposite heterostructures.Voltage-impulse-induced non-volatile ferroelastic switching of ferromagnetic resonance for reconfigurable magnetoelectric microwave devices.Electrically reversible cracks in an intermetallic film controlled by an electric field.Observation of Resistive Switching Behavior in Crossbar Core-Shell Ni/NiO Nanowires Memristor.Nanoscale electrical properties of ZnO nanorods grown by chemical bath deposition.Spatially Resolved Ferroelectric Domain-Switching-Controlled Magnetism in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Multiferroic Heterostructure.Flexible MgO Barrier Magnetic Tunnel Junctions.Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance.
P2860
Q30453563-799588D7-F97F-42CE-8CBA-F07036039384Q30458273-699D6E86-2AE1-425F-A012-EE3F713211E0Q33818819-CFEF1479-39DD-4B9E-A108-5A0A128DC72BQ34557605-69B43CEF-4651-4EF2-8F03-92E08DDC44EBQ36310188-AAD72BAF-A106-42C6-98FA-9709CF0E657AQ36349927-87A66887-DA73-4FD7-ACBB-2F8516EB99D0Q36432452-1703775C-F4CB-421C-8DD5-B62C6FDFC038Q36548492-18D54E5D-C515-41BD-8335-F0BE366CAA1BQ36549352-66AAB70B-E967-44B4-B977-022F992BEB69Q36638049-E50A27A2-45AF-4799-982B-1C5C093BD0F4Q36747942-E7E51BFC-7478-45E6-8AFF-0E6C64929ED0Q36774420-70597771-FBD9-46D1-9F07-D472F5D515A8Q37096624-07B6E434-668B-4687-BBD2-D7C87A11AA27Q37129713-8B5722DC-2466-4E72-A054-51952A7B0B0DQ37223828-9170CB1A-7BD4-4DA3-81DA-41BA8D9E6B8AQ37240882-6885BDF0-C9E6-48E3-828E-882613374FE7Q37252212-47DEE88D-4F2B-4C96-B061-D7130E496F25Q37476410-73E83286-E5E3-48C7-AF0D-AFFEF0483673Q37486069-D4AB68F5-FF34-48FD-B801-BE51354CAAECQ37635012-9B7136C3-1C48-4AAD-B935-C870E97DE9E0Q38178227-A31D80A6-0968-4FD7-9C9A-C2C2BB58A6D2Q38576624-2C693479-26C7-4B46-9D14-A3F0C87DDF96Q38635925-4383F2DE-C052-4174-BB7C-69ADE4F0E5CEQ38645245-4AD2E188-0313-417F-9516-FE2344EB93FEQ39130650-6A2ABBDA-6FE5-4300-8195-F54948F48781Q39249082-C3AC2BE0-38C8-4127-9662-9D021E735A8FQ39273177-C6D7FADE-2A26-4254-9152-56F84184D7A3Q41490759-E6DD057C-1629-4C2A-A51B-3149F9278BCEQ42575404-8912953F-5009-4B36-959F-28791D7E468CQ42656659-A70EF226-10D2-49EA-BBDB-52FB968386C2Q43088834-02104109-7D03-4C84-BCC0-B5931A6EEE0EQ43493990-C2892705-DBED-406B-98E3-BF908930B318Q43887613-CB419FA8-C998-4A20-84B4-0ABA72D5133DQ44633872-E057F3C0-D328-4DEC-9616-28EBD4D0B26BQ47202082-1FEDD0AC-E86F-4B75-BA78-D54C636BEDB4Q47283455-3E05E66C-A047-47EA-B1BE-6611A17B9A42Q48048184-7C883DDC-9AA7-4F6A-A45E-CE2F045FA889Q48115895-226814FC-CA84-4168-B1DF-58082E424630Q49053312-54BE50FF-CF84-4835-8DCA-EFA7BB70948CQ49881582-0F39ABA1-AFBF-4074-89E2-73555AAE434B
P2860
High-density magnetoresistive random access memory operating at ultralow voltage at room temperature.
description
2011 nî lūn-bûn
@nan
2011 թուականի Նոյեմբերին հրատարակուած գիտական յօդուած
@hyw
2011 թվականի նոյեմբերին հրատարակված գիտական հոդված
@hy
2011年の論文
@ja
2011年論文
@yue
2011年論文
@zh-hant
2011年論文
@zh-hk
2011年論文
@zh-mo
2011年論文
@zh-tw
2011年论文
@wuu
name
High-density magnetoresistive ...... room temperature.
@ast
High-density magnetoresistive ...... room temperature.
@en
type
label
High-density magnetoresistive ...... room temperature.
@ast
High-density magnetoresistive ...... room temperature.
@en
prefLabel
High-density magnetoresistive ...... room temperature.
@ast
High-density magnetoresistive ...... room temperature.
@en
P2093
P2860
P356
P1476
High-density magnetoresistive ...... room temperature.
@en
P2093
Ce-Wen Nan
Jia-Mian Hu
Long-Qing Chen
P2860
P2888
P356
10.1038/NCOMMS1564
P407
P577
2011-11-22T00:00:00Z
P5875
P6179
1028875880