Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions.

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Resistive Switching in All-Printed, Flexible and Hybrid MoS2-PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset Graphene/h-BN Heterostructures for Vertical Architecture of RRAM Design.Low-power resistive random access memory by confining the formation of conducting filaments

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P2860

Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions.

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http://www.wikidata.org/entity/Q36774420

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2016 nî lūn-bûn

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2016年の論文

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2016年論文

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2016年論文

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2016年論文

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2016年論文

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2016年論文

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2016年论文

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2016年论文

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2016年论文

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name

Dual-functional Memory and Thr ...... Pull Mechanism of Oxygen Ions.

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Dual-functional Memory and Thr ...... Pull Mechanism of Oxygen Ions.

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type

Item

label

Dual-functional Memory and Thr ...... Pull Mechanism of Oxygen Ions.

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Dual-functional Memory and Thr ...... Pull Mechanism of Oxygen Ions.

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prefLabel

Dual-functional Memory and Thr ...... Pull Mechanism of Oxygen Ions.

@ast

Dual-functional Memory and Thr ...... Pull Mechanism of Oxygen Ions.

@en

P1476

Dual-functional Memory and Thr ...... -Pull Mechanism of Oxygen Ions

@en

P2093

Cheng-Yen Wen

http://www.w3.org/2001/XMLSchema#string

Der-Hsien Lien

http://www.w3.org/2001/XMLSchema#string

Jr-Hau He

http://www.w3.org/2001/XMLSchema#string

Shih-Chun Chao

http://www.w3.org/2001/XMLSchema#string

Yi-Jen Huang

http://www.w3.org/2001/XMLSchema#string

P2860

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Non-volatile memory based on the ferroelectric photovoltaic effect

High-density magnetoresistive random access memory operating at ultralow voltage at room temperature.

TiO2--a prototypical memristive material.

Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation.

Logic computation in phase change materials by threshold and memory switching.

Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing.

Memristive switching mechanism for metal/oxide/metal nanodevices.

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srep23945

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scholarly article

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10.1038/SREP23945

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English

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http://www.w3.org/2001/XMLSchema#string

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Si-Chen Lee

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2016-04-07T00:00:00Z

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27052322

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Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions.

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P2860

P2860

Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions.

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P1433

P1476

P2093

P2860

P2888

P304

P31

P356

P407

P478

P50

P577

P698

P932

P356

P1433

P1476

P2093

P2860

P2888

P304

P31

P356

P407

P478

P50

P577

P698

P932