Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays. - Wikidata - awgldk - TriplyDB

Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays.

Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays.

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Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays.

http://www.wikidata.org/entity/Q33704787

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2017 nî lūn-bûn

@nan

2017 թուականի Մայիսին հրատարակուած գիտական յօդուած

@hyw

2017 թվականի մայիսին հրատարակված գիտական հոդված

@hy

2017年の論文

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2017年学术文章

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2017年学术文章

@zh-cn

2017年学术文章

@zh-hans

2017年学术文章

@zh-my

2017年学术文章

@zh-sg

2017年學術文章

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name

Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays.

@ast

Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays.

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type

label

Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays.

@ast

Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays.

@en

prefLabel

Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays.

@ast

Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays.

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Scientific Reports

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Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays.

@en

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Chi-Hsin Huang

http://www.w3.org/2001/XMLSchema#string

Jian-Shiou Huang

http://www.w3.org/2001/XMLSchema#string

Shih-Ming Lin

http://www.w3.org/2001/XMLSchema#string

Ta-Shun Chou

http://www.w3.org/2001/XMLSchema#string

Yu-Lun Chueh

http://www.w3.org/2001/XMLSchema#string

P2860

Nanoionics-based resistive switching memories

Complementary resistive switches for passive nanocrossbar memories

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Engineering nonlinearity into memristors for passive crossbar applications

Single-step formation of ZnO/ZnWO(x) bilayer structure via interfacial engineering for high performance and low energy consumption resistive memory with controllable high resistance states.

Resistive memory for harsh electronics: immunity to surface effect and high corrosion resistance via surface modification.

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook.

Memristive devices for computing.

Bipolar resistive switching of single gold-in-Ga2O3 nanowire.

In situ control of oxygen vacancies in TiO₂ by atomic layer deposition for resistive switching devices.

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10.1038/S41598-017-01354-7

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1

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1085432251

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28522821

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5437035

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