Multilevel data storage memory using deterministic polarization control. - Wikidata - awgldk - TriplyDB

Multilevel data storage memory using deterministic polarization control.

Multilevel data storage memory using deterministic polarization control.

http://www.wikidata.org/entity/Q34097361

about

Multi-floor cascading ferroelectric nanostructures: multiple data writing-based multi-level non-volatile memory devices.Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode.Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction.Giant Electroresistive Ferroelectric Diode on 2DEG Graphene-ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations.A multilevel nonvolatile magnetoelectric memory.Optical Imaging of Nonuniform Ferroelectricity and Strain at the Diffraction Limit.Three-dimensional imaging of vortex structure in a ferroelectric nanoparticle driven by an electric field Non-volatile ferroelectric memory with position-addressable polymer semiconducting nanowire.Topological phase transformations and intrinsic size effects in ferroelectric nanoparticles.Initialization-Free Multilevel States Driven by Spin-Orbit Torque Switching.Multilevel conductance switching of a memory device induced by enhanced intermolecular charge transfer.Deterministic arbitrary switching of polarization in a ferroelectric thin film.Ferroelectric tunnel junctions for information storage and processing.Facilitation of Ferroelectric Switching via Mechanical Manipulation of Hierarchical Nanoscale Domain Structures.The role of Bi vacancies in the electrical conduction of BiFeO₃: a first-principles approach.Stationary domain wall contribution to enhanced ferroelectric susceptibility.A ferroelectric memristor based on the migration of oxygen vacancies Investigation of multilevel data memory using filament and polarization control Voltage pulse controlling multilevel data ferroelectric storage memory with a nonepitaxial ultrathin film Out-of-plane three-stable-state ferroelectric switching: Finding the missing middle states Physical reality of the Preisach model for organic ferroelectrics Improved Ferroelectric and Leakage Properties of Ce Doped in BiFeO3Thin Films Inside story of ferroelectric memories Advances in Multiferroic Nanomaterials Assembled with Clusters

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Multilevel data storage memory using deterministic polarization control.

http://www.wikidata.org/entity/Q34097361

description

2011 nî lūn-bûn

@nan

2011 թուականի Դեկտեմբերին հրատարակուած գիտական յօդուած

@hyw

2011 թվականի դեկտեմբերին հրատարակված գիտական հոդված

@hy

2011年の論文

@ja

2011年論文

@yue

2011年論文

@zh-hant

2011年論文

@zh-hk

2011年論文

@zh-mo

2011年論文

@zh-tw

2011年论文

@wuu

name

Multilevel data storage memory using deterministic polarization control.

@ast

Multilevel data storage memory using deterministic polarization control.

@en

Multilevel data storage memory using deterministic polarization control.

@nl

type

label

Multilevel data storage memory using deterministic polarization control.

@ast

Multilevel data storage memory using deterministic polarization control.

@en

Multilevel data storage memory using deterministic polarization control.

@nl

prefLabel

Multilevel data storage memory using deterministic polarization control.

@ast

Multilevel data storage memory using deterministic polarization control.

@en

Multilevel data storage memory using deterministic polarization control.

@nl

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P1433

Advanced Materials

P1476

Multilevel data storage memory using deterministic polarization control.

@en

P2093

Byung Chul Jeon

http://www.w3.org/2001/XMLSchema#string

Chang Beom Eom

http://www.w3.org/2001/XMLSchema#string

Jong-Gul Yoon

http://www.w3.org/2001/XMLSchema#string

Seung Hyup Baek

http://www.w3.org/2001/XMLSchema#string

Tae Won Noh

http://www.w3.org/2001/XMLSchema#string

Yong Su Kim

http://www.w3.org/2001/XMLSchema#string

P2860

A Dynamical Theory of the Electromagnetic Field

Physics of thin-film ferroelectric oxides

Giant tunnel electroresistance for non-destructive readout of ferroelectric states

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Defect-mediated polarization switching in ferroelectrics and related materials: from mesoscopic mechanisms to atomistic control.

Above-bandgap voltages from ferroelectric photovoltaic devices.

Electrical control of antiferromagnetic domains in multiferroic BiFeO3 films at room temperature.

Applications of modern ferroelectrics.

Nanoscale ferroelectric field-effect writing and reading using scanning tunnelling spectroscopy.

Suppressed Dependence of Polarization on Epitaxial Strain in Highly Polar Ferroelectrics

P304

402-406

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scholarly article

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10.1002/ADMA.201103679

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3

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24

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2011-12-12T00:00:00Z

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51871556

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22162010

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